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M24C32-WMN5TG/K PDF预览

M24C32-WMN5TG/K

更新时间: 2024-11-20 15:44:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
41页 718K
描述
I2C/2-WIRE SERIAL EEPROM

M24C32-WMN5TG/K 技术参数

生命周期:Not Recommended包装说明:,
Reach Compliance Code:compliant风险等级:5.56
内存集成电路类型:EEPROM串行总线类型:I2C
Base Number Matches:1

M24C32-WMN5TG/K 数据手册

 浏览型号M24C32-WMN5TG/K的Datasheet PDF文件第2页浏览型号M24C32-WMN5TG/K的Datasheet PDF文件第3页浏览型号M24C32-WMN5TG/K的Datasheet PDF文件第4页浏览型号M24C32-WMN5TG/K的Datasheet PDF文件第5页浏览型号M24C32-WMN5TG/K的Datasheet PDF文件第6页浏览型号M24C32-WMN5TG/K的Datasheet PDF文件第7页 
M24C32-W M24C32-R M24C32-F  
M24C32-X M24C32-DF  
32-Kbit serial I²C bus EEPROM  
Datasheet - production data  
Features  
2
Compatible with all I C bus modes:  
– 1 MHz  
– 400 kHz  
– 100 kHz  
TSSOP8 (DW)  
169 mil width  
Memory array:  
– 32Kbit (4 Kbytes) of EEPROM  
– Page size: 32 bytes  
– Additional Write lockable page  
(M24C32-D order codes)  
Single supply voltage:  
– 1.7 V to 5.5 V over –40 °C / +85 °C  
SO8 (MN)  
150 mil width  
– 1.6 V to 5.5 V over –20 °C / +85 °C  
Write:  
– Byte Write within 5 ms (10 ms when  
V
= 1.6 V)  
CC  
– Page Write within 5 ms (10 ms when  
= 1.6 V)  
V
CC  
Random and sequential Read modes  
Write protect of the whole memory array  
Enhanced ESD/Latch-Up protection  
More than 4 million Write cycles  
PDIP8 (BN)  
More than 200-year data retention  
Packages  
UFDFPN8  
(MC)  
®
PDIP8 ECOPACK1  
®
SO8 ECOPACK2  
®
TSSOP8 ECOPACK2  
®
UFDFPN8 ECOPACK2  
®
UFDFPN5 ECOPACK2  
UFDFPN5  
(MH)  
May 2014  
DocID4578 Rev 22  
1/41  
This is information on a product in full production.  
www.st.com  

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