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M24C32-WMN6P/P PDF预览

M24C32-WMN6P/P

更新时间: 2024-11-24 15:44:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
41页 718K
描述
4KX8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8

M24C32-WMN6P/P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliant风险等级:5.1
最大时钟频率 (fCLK):0.4 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010DDDR
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm内存密度:32768 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:4096 words
字数代码:4000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:3/5 V认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:1.75 mm
串行总线类型:I2C最大待机电流:0.000002 A
子类别:EEPROMs最大压摆率:0.005 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):2.7 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:3.9 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE
Base Number Matches:1

M24C32-WMN6P/P 数据手册

 浏览型号M24C32-WMN6P/P的Datasheet PDF文件第2页浏览型号M24C32-WMN6P/P的Datasheet PDF文件第3页浏览型号M24C32-WMN6P/P的Datasheet PDF文件第4页浏览型号M24C32-WMN6P/P的Datasheet PDF文件第5页浏览型号M24C32-WMN6P/P的Datasheet PDF文件第6页浏览型号M24C32-WMN6P/P的Datasheet PDF文件第7页 
M24C32-W M24C32-R M24C32-F  
M24C32-X M24C32-DF  
32-Kbit serial I²C bus EEPROM  
Datasheet - production data  
Features  
2
Compatible with all I C bus modes:  
– 1 MHz  
– 400 kHz  
– 100 kHz  
TSSOP8 (DW)  
169 mil width  
Memory array:  
– 32Kbit (4 Kbytes) of EEPROM  
– Page size: 32 bytes  
– Additional Write lockable page  
(M24C32-D order codes)  
Single supply voltage:  
– 1.7 V to 5.5 V over –40 °C / +85 °C  
SO8 (MN)  
150 mil width  
– 1.6 V to 5.5 V over –20 °C / +85 °C  
Write:  
– Byte Write within 5 ms (10 ms when  
V
= 1.6 V)  
CC  
– Page Write within 5 ms (10 ms when  
= 1.6 V)  
V
CC  
Random and sequential Read modes  
Write protect of the whole memory array  
Enhanced ESD/Latch-Up protection  
More than 4 million Write cycles  
PDIP8 (BN)  
More than 200-year data retention  
Packages  
UFDFPN8  
(MC)  
®
PDIP8 ECOPACK1  
®
SO8 ECOPACK2  
®
TSSOP8 ECOPACK2  
®
UFDFPN8 ECOPACK2  
®
UFDFPN5 ECOPACK2  
UFDFPN5  
(MH)  
May 2014  
DocID4578 Rev 22  
1/41  
This is information on a product in full production.  
www.st.com  

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