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M24C32-WMW3T PDF预览

M24C32-WMW3T

更新时间: 2024-11-20 14:52:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
19页 149K
描述
4KX8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.200 INCH, PLASTIC, SO-8

M24C32-WMW3T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:0.200 INCH, PLASTIC, SO-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.62其他特性:00.1.142
最大时钟频率 (fCLK):0.4 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010DDDR
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:5.3 mm内存密度:32768 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:4096 words字数代码:4000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:4KX8
输出特性:OPEN-DRAIN封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.3
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:2.03 mm
串行总线类型:I2C子类别:EEPROMs
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:MOS温度等级:AUTOMOTIVE
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:5.25 mm
最长写入周期时间 (tWC):10 ms写保护:HARDWARE
Base Number Matches:1

M24C32-WMW3T 数据手册

 浏览型号M24C32-WMW3T的Datasheet PDF文件第2页浏览型号M24C32-WMW3T的Datasheet PDF文件第3页浏览型号M24C32-WMW3T的Datasheet PDF文件第4页浏览型号M24C32-WMW3T的Datasheet PDF文件第5页浏览型号M24C32-WMW3T的Datasheet PDF文件第6页浏览型号M24C32-WMW3T的Datasheet PDF文件第7页 
M24C64  
M24C32  
64/32 Kbit Serial I²C Bus EEPROM  
2
Compatible with I C Extended Addressing  
2
Two Wire I C Serial Interface  
Supports 400 kHz Protocol  
Single Supply Voltage:  
8
– 4.5V to 5.5V for M24Cxx  
8
– 2.5V to 5.5V for M24Cxx-W  
– 1.8V to 3.6V for M24Cxx-R  
1
1
Hardware Write Control  
PSDIP8 (BN)  
0.25 mm frame  
TSSOP8 (DW)  
169 mil width  
BYTE and PAGE WRITE (up to 32 Bytes)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
Automatic Address Incrementing  
Enhanced ESD/Latch-Up Behavior  
1 Million Erase/Write Cycles (minimum)  
40 Year Data Retention (minimum)  
8
8
1
1
SO8 (MN)  
SO8 (MW)  
150 mil width  
200 mil width  
DESCRIPTION  
2
These I C-compatible electrically erasable pro-  
grammable memory (EEPROM) devices are orga-  
nized as 8192x8 bits (M24C64) and 4096x8 bits  
(M24C32), and operate down to 2.5 V (for the -W  
version of each device), and down to 1.8 V (for the  
-R version of each device).  
Figure 1. Logic Diagram  
The M24C64 and M24C32 are available in Plastic  
Dual-in-Line, Plastic Small Outline and Thin Shrink  
Small Outline packages.  
V
CC  
3
E0-E2  
SDA  
Table 1. Signal Names  
M24C64  
M24C32  
E0, E1, E2  
SDA  
Chip Enable Inputs  
SCL  
WC  
Serial Data/Address Input/  
Output  
SCL  
WC  
Serial Clock  
Write Control  
Supply Voltage  
Ground  
V
SS  
V
V
CC  
SS  
AI01844B  
December 1999  
1/19  

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