5秒后页面跳转
M1MA151KT1 PDF预览

M1MA151KT1

更新时间: 2024-01-01 08:38:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 整流二极管开关
页数 文件大小 规格书
6页 86K
描述
SC-59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V-100 mA SURFACE MOUNT

M1MA151KT1 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SC-59包装说明:LEAD FREE, CASE 318D-04, SC-59, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:1 week风险等级:0.9
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.5 A元件数量:1
端子数量:3最高工作温度:150 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:40 V
最大反向恢复时间:0.003 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

M1MA151KT1 数据手册

 浏览型号M1MA151KT1的Datasheet PDF文件第2页浏览型号M1MA151KT1的Datasheet PDF文件第3页浏览型号M1MA151KT1的Datasheet PDF文件第4页浏览型号M1MA151KT1的Datasheet PDF文件第5页浏览型号M1MA151KT1的Datasheet PDF文件第6页 
Order this document  
by M1MA151KT1/D  
SEMICONDUCTOR TECHNICAL DATA  
These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed  
switching applications. These devices are housed in the SC–59 package which is  
designed for low power surface mount applications.  
Motorola Preferred Devices  
Fast t , < 3.0 ns  
rr  
Low C , < 2.0 pF  
D
Available in 8 mm Tape and Reel  
Use M1MA151/2KT1 to order the 7 inch/3000 unit reel.  
Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel.  
SC–59 PACKAGE  
SINGLE SILICON  
SWITCHING DIODES  
40/80 V–100 mA  
CATHODE  
3
SURFACE MOUNT  
3
2
1
2
1
ANODE NO CONNECTION  
MAXIMUM RATINGS (T = 25°C)  
A
CASE 318D–03, STYLE 2  
SC–59  
Rating  
Symbol  
Value  
40  
Unit  
Reverse Voltage  
M1MA151KT1  
V
R
Vdc  
M1MA152KT1  
M1MA151KT1  
M1MA152KT1  
80  
Peak Reverse Voltage  
V
RM  
40  
Vdc  
80  
Forward Current  
I
100  
225  
500  
mAdc  
mAdc  
mAdc  
F
Peak Forward Current  
Peak Forward Surge Current  
I
FM  
(1)  
I
FSM  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
Max  
200  
Unit  
mW  
°C  
Power Dissipation  
P
D
Junction Temperature  
Storage Temperature  
T
J
150  
T
stg  
55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C)  
A
Characteristic  
Symbol  
Condition  
Min  
Max  
0.1  
0.1  
1.2  
Unit  
Reverse Voltage Leakage Current  
M1MA151KT1  
M1MA152KT1  
I
R
V
= 35 V  
= 75 V  
40  
80  
µAdc  
R
R
V
Forward Voltage  
V
F
I
= 100 mA  
Vdc  
Vdc  
F
Reverse Breakdown Voltage  
M1MA151KT1  
M1MA152KT1  
V
R
I
= 100 µA  
R
Diode Capacitance  
C
V
= 0, f = 1.0 MHz  
2.0  
3.0  
pF  
ns  
D
R
(2)  
t
rr  
Reverse Recovery Time  
I = 10 mA, V = 6.0 V,  
F R  
R
= 100 , I = 0.1 I  
L
rr  
R
1. t = 1 SEC  
2. t Test Circuit  
rr  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 3  
Motorola, Inc. 1996  

M1MA151KT1 替代型号

型号 品牌 替代类型 描述 数据表
M1MA151KT2 ONSEMI

功能相似

Single Silicon Switching Diodes
M1MA151KT1G ONSEMI

功能相似

Single Silicon Switching Diodes
M1MA151KT1 LRC

功能相似

Single Silicon Switching Diodes

与M1MA151KT1相关器件

型号 品牌 获取价格 描述 数据表
M1MA151KT1_12 ONSEMI

获取价格

Single Silicon Switching Diodes
M1MA151KT1G ONSEMI

获取价格

Single Silicon Switching Diodes
M1MA151KT2 ONSEMI

获取价格

Single Silicon Switching Diodes
M1MA151KT3 MOTOROLA

获取价格

0.1A, 40V, SILICON, SIGNAL DIODE, SC-59, 3 PIN
M1MA151KT3 ONSEMI

获取价格

0.1A, SILICON, SIGNAL DIODE, CASE 318D-04, SC-59, 3 PIN
M1MA151KT3G ONSEMI

获取价格

0.1A, SILICON, SIGNAL DIODE, LEAD FREE, CASE 318D-04, SC-59, 3 PIN
M1MA151WA SECOS

获取价格

Surface Mount Switching Diode
M1MA151WALT1 LRC

获取价格

Common Anode Silicon Dual Switching diodes
M1MA151WALT1G LRC

获取价格

Common Anode Silicon Dual Switching diodes
M1MA151WAT1 LRC

获取价格

Common Anode Silicon Dual Switching diodes