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M1MA151KT3G PDF预览

M1MA151KT3G

更新时间: 2024-01-05 11:37:14
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管
页数 文件大小 规格书
3页 41K
描述
0.1A, SILICON, SIGNAL DIODE, LEAD FREE, CASE 318D-04, SC-59, 3 PIN

M1MA151KT3G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SC-59
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.37
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.2 W认证状态:Not Qualified
最大反向恢复时间:0.003 µs表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

M1MA151KT3G 数据手册

 浏览型号M1MA151KT3G的Datasheet PDF文件第2页浏览型号M1MA151KT3G的Datasheet PDF文件第3页 
M1MA151KT1,  
M1MA152KT1  
Preferred Device  
Single Silicon Switching  
Diodes  
These Silicon Epitaxial Planar Diodes are designed for use in ultra  
high speed switching applications. These devices are housed in the  
SC−59 package which is designed for low power surface mount  
applications.  
http://onsemi.com  
SC−59 PACKAGE SINGLE  
SILICON SWITCHING DIODES  
40/80 V−100 mA  
Features  
Fast t , < 3.0 ns  
rr  
SURFACE MOUNT  
Low C , < 2.0 pF  
D
Available in 8 mm Tape and Reel  
3 CATHODE  
Use M1MA151/2KT1 to order the 7 inch/3000 unit reel.  
Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel.  
Pb−Free Packages are Available  
MAXIMUM RATINGS (T = 25°C)  
A
2
ANODE  
1
NO CONNECTION  
Rating  
Reverse Voltage  
Symbol  
Value  
40  
Unit  
M1MA151KT1  
M1MA152KT1  
V
Vdc  
R
80  
3
Peak Reverse Voltage M1MA151KT1  
M1MA152KT1  
V
40  
Vdc  
RM  
2
80  
1
Forward Current  
I
100  
225  
500  
mAdc  
mAdc  
mAdc  
F
SC−59  
SUFFIX  
CASE 318D  
Peak Forward Current  
Peak Forward Surge Current  
I
FM  
I
FSM  
(Note 1)  
THERMAL CHARACTERISTICS  
Rating  
MARKING DIAGRAM  
Symbol  
Max  
200  
Unit  
mW  
°C  
Power Dissipation  
P
D
Junction Temperature  
Storage Temperature  
T
150  
J
M
Mx  
G
T
stg  
55 to +150  
°C  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1
Mx  
x
=
=
Device Code  
H for 151  
I for 152  
1. t = 1 SEC  
M
=
=
Date Code*  
G
Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
August, 2005 − Rev. 7  
M1MA151KT1/D  
 

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Rectifier Diode, 2 Element, 0.1A, 40V V(RRM), Silicon, SC-59, 3 PIN