Datasheet > M0859LC180

M0859LC180

更新时间： 2024-11-06 14:56:47

品牌	Logo	应用领域
力特 - LITTELFUSE		软恢复二极管
页数	文件大小	规格书
12页	658K
描述
我们的软恢复二极管提供多种反向恢复特性，可满足续流和缓冲应用的需求。这些器件可提供高达6kV的阻断电压和高达2413A的平均电流，并采用24mm至75mm直径的硅片。这些器件尤其适用于要求软恢

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

M0859LC180 数据手册

Date: - 18^thDec 2018

Data Sheet Issue: - 2

Soft Recovery Diode

Type M0859LC140 to M0859LC180

(Old Type No.: SM02-16CXC220)

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_RRM

V_RSM

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

1400-1800

1500-1900

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_F(AV)M

I_F(RMS)

I_f(d.c.)

I_FSM

Maximum average forward current, T_sink=55°C, (note 2)

Maximum average forward current. T_sink=85°C, (note 2)

Maximum average forward. T_sink=85°C, (note 3)

Nominal RMS forward current, T_sink=25°C, (note 2)

D.C. forward current, T_sink=25°C, (note 4)

859

562

319

1742

1404

Peak non-repetitive surge t_p=10ms, V_RM=60%V_RRM, (note 5)

Peak non-repetitive surge t_p=10ms, V_RM10V, (note 5)

I²t capacity for fusing t_p=10ms, V_RM=60%V_RRM, (note 5)

I²t capacity for fusing t_p=10ms, V_RM10V, (note 5)

Operating temperature range

A²s

°C

I_FSM2

I²t

500×10³

605×10³

-40 to +125

-40 to +150

I²t

T_{j op}

T_stg

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

Data Sheet. Types M0859LC140 to M0859LC180 Issue 2

Page 1 of 11

December 2018

12 3 4 5 6 7...12

中文翻译

下载PDF

与M0859LC180相关器件

型号	品牌	获取价格	描述	数据表
M0863LC260	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 863A, 2600V V(RRM), Silicon,
M0863LC260	LITTELFUSE	获取价格	我们的软恢复二极管提供多种反向恢复特性，可满足续流和缓冲应用的需求。这些器件可提供高达6
M0863LC280	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 863A, 2800V V(RRM), Silicon,
M0863LC300	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 863A, 3000V V(RRM), Silicon,
M0863LC320	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 863A, 3200V V(RRM), Silicon,
M0863LC340	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 863A, 3400V V(RRM), Silicon,
M0863LC360	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 863A, 3600V V(RRM), Silicon,
M0863LC360	LITTELFUSE	获取价格	我们的软恢复二极管提供多种反向恢复特性，可满足续流和缓冲应用的需求。这些器件可提供高达6
M086AB1	STMICROELECTRONICS	获取价格	TONE GENERATORS
M086B1	STMICROELECTRONICS	获取价格	TONE GENERATORS