Datasheet > 存储 > SRAM> LY622568LL

LY622568LL

更新时间： 2024-01-03 11:51:06

品牌	Logo	应用领域
台湾来扬 - LYONTEK		静态存储器
页数	文件大小	规格书
14页	217K
描述
256K X 8 BIT LOW POWER CMOS SRAM

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技术参数
数据手册

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LY622568LL 技术参数

生命周期：	Not Recommended	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.8
Is Samacsys：	N	Base Number Matches：	1

LY622568LL 数据手册

LY622568

256K X 8 BIT LOW POWER CMOS SRAM

Rev. 2.2

PIN CONFIGURATION

A17

A16

A14

A12

Vcc

A15

CE2

WE#

A13

A11

OE#

A10

CE#

DQ7

DQ6

DQ5

DQ4

DQ3

Vss

DQ2

DQ1

DQ0

A13

WE#

CE2

A15

Vcc

A17

A16

A14

A12

A11

OE#

A10

CE#

DQ7

DQ6

DQ5

DQ4

DQ3

LY622568

DQ0

DQ1

DQ2

Vss

TSOP-I/STSOP

SOP/P-DIP

ABSOLUTE MAXIMUN RATINGS*

PARAMETER

SYMBOL

VT1

RATING

-0.5 to 6.5

UNIT

Voltage on VCC relative to VSS

Voltage on any other pin relative to VSS

VT2

-0.5 to VCC+0.5

0 to 70(C grade)

-20 to 80(E grade)

-40 to 85(I grade)

-65 to 150

℃

Operating Temperature

℃

Storage Temperature

Power Dissipation

DC Output Current

TSTG

IOUT

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress

rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.

TRUTH TABLE

CE#

CE2

OE#

WE#

SUPPLY CURRENT

MODE

I/O OPERATION

High-Z

I_SB1

Standby

High-Z

I_SB1

Output Disable

Read

High-Z

I_CC,I_CC1

D_OUT

Write

D_IN

Note: H = V_IH, L = V_IL, X = Don't care.

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

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