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LT1158CN#TRPBF PDF预览

LT1158CN#TRPBF

更新时间： 2024-11-29 20:07:59
品牌 Logo 应用领域
凌特 - Linear 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
22页 244K
描述
IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver

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中文翻译

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LT1158CN#TRPBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：DIP
包装说明：DIP,针数：16
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.07
高边驱动器：YES接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码：R-PDIP-T16JESD-609代码：e3
功能数量：1端子数量：16
最高工作温度：70 °C最低工作温度：
封装主体材料：PLASTIC/EPOXY封装代码：DIP
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：250认证状态：Not Qualified
座面最大高度：3.81 mm最大供电电压：30 V
最小供电电压：5 V表面贴装：NO
温度等级：COMMERCIAL端子面层：MATTE TIN
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
断开时间：0.55 µs宽度：7.62 mm
Base Number Matches：1

LT1158CN#TRPBF 数据手册

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LT1158  
Half Bridge N-Channel  
Power MOSFET Driver  
FEATURES  
DESCRIPTION  
+
A single input pin on the LT®1158 synchronously controls  
two N-channel power MOSFETs in a totem pole configura-  
tion. Unique adaptive protection against shoot-through  
currents eliminates all matching requirements for the two  
MOSFETs. This greatly eases the design of high efficiency  
motor control and switching regulator systems.  
n
Drives Gate of Top Side MOSFET Above V  
n
Operates at Supply Voltages from 5V to 30V  
150ns Transition Times Driving 3000pF  
Over 500mA Peak Driver Current  
Adaptive Non-Overlap Gate Drives  
Continuous Current Limit Protection  
Auto Shutdown and Retry Capability  
Internal Charge Pump for DC Operation  
Built-In Gate Voltage Protection  
n
n
n
n
n
n
n
n
n
n
A continuous current limit loop in the LT1158 regulates  
short-circuit current in the top power MOSFET. Higher  
start-up currents are allowed as long as the MOSFET V  
does not exceed 1.2V. By returning the FAULT output to  
the enable input, the LT1158 will automatically shut down  
in the event of a fault and retry when an internal pull-up  
current has recharged the enable capacitor.  
DS  
Compatible with Current-Sensing MOSFETs  
TTL/CMOS Input Levels  
Fault Output Indication  
APPLICATIONS  
An on-chip charge pump is switched in when needed to  
turn on the top N-channel MOSFET continuously. Special  
circuitry ensures that the top side gate drive is safely  
maintained in the transition between PWM and DC opera-  
tion. The gate-to-source voltages are internally limited to  
14.5V when operating at higher supply voltages.  
n
PWM of High Current Inductive Loads  
n
Half Bridge and Full Bridge Motor Control  
n
Synchronous Step-Down Switching Regulators  
n
Three-Phase Brushless Motor Drive  
n
High Current Transducer Drivers  
n
Battery-Operated Logic-Level MOSFETs  
L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other  
trademarks are the property of their respective owners. Protected by U.S. Patents including  
5365118.  
TYPICAL APPLICATION  
24V  
1N4148  
Top and Bottom Gate Waveforms  
0.1μF  
BOOST DR  
+
BOOST  
V
T GATE DR  
+
IRFZ34  
+
+
500μF  
LOW  
ESR  
+
10μF  
V
T GATE FB  
T SOURCE  
PWM  
0Hz TO  
100kHz  
+
+
INPUT  
SENSE  
LT1158  
R
SENSE  
0.015Ω  
–
LOAD  
ENABLE  
FAULT  
BIAS  
SENSE  
–
1158 TA02  
V
= 24V  
= 12Ω  
IN  
L
1μF  
R
B GATE DR  
B GATE FB  
IRFZ34  
0.01μF  
GND  
LT1158 TA01  
1158fb  
1
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中文翻译

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