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LT1158IS PDF预览

LT1158IS

更新时间： 2024-11-26 22:34:19
品牌 Logo 应用领域
凌特 - Linear 驱动器
页数 文件大小 规格书
20页 425K
描述
Half Bridge N-Channel Power MOSFET Driver

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中文翻译

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LT1158IS 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOIC包装说明：SOP, SOP16,.4
针数：16Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.68高边驱动器：YES
接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码：R-PDSO-G16
JESD-609代码：e0长度：9.9 mm
功能数量：1端子数量：16
最高工作温度：85 °C最低工作温度：-40 °C
标称输出峰值电流：15 A封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP16,.4
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：245电源：12 V
认证状态：Not Qualified座面最大高度：1.75 mm
子类别：MOSFET Drivers最小供电电压：5 V
标称供电电压：12 V表面贴装：YES
技术：BIPOLAR温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：3.9 mm
Base Number Matches：1

LT1158IS 数据手册

 浏览型号LT1158IS的Datasheet PDF文件第2页浏览型号LT1158IS的Datasheet PDF文件第3页浏览型号LT1158IS的Datasheet PDF文件第4页浏览型号LT1158IS的Datasheet PDF文件第5页浏览型号LT1158IS的Datasheet PDF文件第6页浏览型号LT1158IS的Datasheet PDF文件第7页 
LT1158  
Half Bridge N-Channel  
Power MOSFET Driver  
U
DESCRIPTION  
FEATURES  
Drives Gate of Top Side MOSFET Above V+  
A single input pin on the LT1158 synchronously controls  
two N-channel power MOSFETs in a totem pole configura-  
tion. Unique adaptive protection against shoot-through  
currents eliminates all matching requirements for the two  
MOSFETs. This greatly eases the design of high efficiency  
motor control and switching regulator systems.  
■
■
Operates at Supply Voltages from 5V to 30V  
■
150ns Transition Times Driving 3000pF  
■
Over 500mA Peak Driver Current  
■
Adaptive Non-Overlap Gate Drives  
■
Continuous Current Limit Protection  
■
Auto Shutdown and Retry Capability  
A continuous current limit loop in the LT1158 regulates  
short-circuit current in the top power MOSFET. Higher  
start-up currents are allowed as long as the MOSFET VDS  
does not exceed 1.2V. By returning the fault output to the  
enable input, the LT1158 will automatically shut down in  
the event of a fault and retry when an internal pull-up  
current has recharged the enable capacitor.  
■
Internal Charge Pump for DC Operation  
■
Built-In Gate Voltage Protection  
■
Compatible with Current-Sensing MOSFETs  
■
TTL/CMOS Input Levels  
Fault Output Indication  
■
U
APPLICATIONS  
An on-chip charge pump is switched in when needed to  
turn on the top N-channel MOSFET continuously. Special  
circuitry ensures that the top side gate drive is safely  
maintained in the transition between PWM and DC opera-  
tion. The gate-to-source voltages are internally limited to  
14.5V when operating at higher supply voltages.  
■
PWM of High Current Inductive Loads  
■
Half Bridge and Full Bridge Motor Control  
■
Synchronous Step-Down Switching Regulators  
Three-Phase Brushless Motor Drive  
High Current Transducer Drivers  
■
■
■
Battery-Operated Logic-Level MOSFETs  
U
TYPICAL APPLICATION  
24V  
Top and Bottom Gate Waveforms  
1N4148  
0.1µF  
BOOST DR  
+
BOOST  
V
T GATE DR  
+
IRFZ34  
+
+
500µF  
LOW  
ESR  
+
10µF  
V
T GATE FB  
T SOURCE  
PWM  
0Hz TO  
100kHz  
+
+
INPUT  
SENSE  
LT1158  
R
SENSE  
0.015Ω  
–
LOAD  
ENABLE  
FAULT  
BIAS  
SENSE  
–
VIN = 24V  
RL = 12Ω  
1µF  
1158 TA02  
B GATE DR  
B GATE FB  
IRFZ34  
0.01µF  
GND  
LT1158 TA01  
1
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中文翻译

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