Datasheet > LSU406_TO-78

LSU406_TO-78

更新时间： 2024-11-16 11:44:15

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N-CHANNEL JFET

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LSU406_TO-78 数据手册

LSU406

LOW NOISE, LOW DRIFT

MONOLITHIC DUAL

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix U406 with LSU406

The U406/ LSU406 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET

FEATURES

LOW DRIFT

LOW NOISE

LOW PINCHOFF

The LSU406 is a high-performance monolithic dual

| V _GS1‐2/ T| = 10µV/°C TYP.

e_n= 6nV/Hz @ 10Hz TYP.

V_p= 2.5V TYP.

JFET featuring extremely low noise, tight offset voltage

and low drift over temperature specifications, and is

targeted for use in a wide range of precision

instrumentation applications. The LSU406 features a 5-

mV offset and 10-µV/°C drift. The LSU406 is a direct

replacement for discontinued Siliconix U406.

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

The hermetically sealed TO-71 & TO-78 packages are

well suited for military applications.

‐65°C to +150°C

+150°C

Maximum Voltage and Current for Each Transistor – Note 1

(See Packaging Information).

‐V_GSS

‐V_DSO

‐I_G(f)

Gate Voltage to Drain or Source

Drain to Source Voltage

Gate Forward Current

50V

10mA

U406 / LSU406 Applications:

Maximum Power Dissipation

Device Dissipation @ Free Air – Total

300mW

Wideband Differential Amps

High-Speed,Temp-Compensated Single-

Ended Input Amps

High-Speed Comparators

Impedance Converters and vibrations

detectors.

MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED

SYMBOL

CHARACTERISTICS VALUE UNITS CONDITIONS

| V _GS1‐2/ T| max.

DRIFT VS.

TEMPERATURE

µV/°C

V_DG=10V, I_D=200µA

T_A=‐55°C to +125°C

V_DG=10V, I_D=200µA

| V _GS1‐2| max.

OFFSET VOLTAGE

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

BV_GGO

CHARACTERISTICS

Breakdown Voltage

Gate‐To‐Gate Breakdown

TRANSCONDUCTANCE

Full Conduction

MIN.

±50

TYP.

‐‐

MAX.

‐‐

UNITS

CONDITIONS

V_DS= 0

I _G= 1nA

I_D=1nA

I_D= 0

I_S= 0

Y_fSS

Y_fS

2000

1000

‐‐

7000

2000

µmho

V_DG= 10V

V_DG= 15V

V_GS= 0V f = 1kHz

I_D= 200µA f = 1kHz

Typical Operation

Click To Buy

|Y_FS1‐2/ Y _FS|

Mismatch

DRAIN CURRENT

Full Conduction

‐‐

0.6

I_DSS

|I_DSS1‐2/ I_DSS

0.5

‐‐

V_DG= 10V

V_GS= 0V

Mismatch at Full Conduction

GATE VOLTAGE

V_GS(off) or V_p

V_GS(on)

Pinchoff voltage

Operating Range

GATE CURRENT

‐0.5

‐‐

‐2.5

‐2.3

V_DS= 15V

V_DS=15V

I_D= 1nA

I_D=200µA

‐I_Gmax.

‐I_GSSmax.

Operating

‐‐

‐4

‐‐

‐15

‐10

100

V_DG= 15V I_D= 200µA

High Temperature

At Full Conduction

High Temperature

OUTPUT CONDUCTANCE

Full Conduction

T_A= +125°C

V_DS=0

V_DG= 15V

T_A= +125°C

Y_OSS

Y_OS

‐‐

µmho

V_DG= 10V

V_DG= 15V

V_GS= 0V

Operating

0.2

I_D= 500µA

COMMON MODE REJECTION

CMR

‐20 log | V _GS1‐2/ V _DS

‐‐

V_DS= 10 to 20V

I_D=30µA

NOISE

Figure

Voltage

CAPACITANCE

Input

V_DS= 15V V_GS= 0V

R_G= 10M

e_n

‐‐

0.5

‐‐

nV/√Hz

f= 100Hz NBW= 6Hz

V_DS=15V I_D=200µA f=10Hz NBW=1Hz

V_DS= 15V I_D= 200µA f= 1MHz

C_ISS

C_RSS

‐‐

1.5

Reverse Transfer

Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired

TO-71 / TO-78 (Top View)

Micross Components Europe

Available Packages:

U406 / LSU406 in TO-71 & TO-78

U406 / LSU406 available as bare die

Please contact Micross for full package and die dimensions

Tel: +44 1603 788967

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

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与LSU406_TO-78相关器件

型号	品牌	获取价格	描述	数据表
LS-U406{P-DIP}	Linear	获取价格	50V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET
LS-U406{SOIC}	Linear	获取价格	50V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET
LS-U406{TO-71}	Linear	获取价格	50V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71
LSU406-PDIP-8	Linear	获取价格	Small Signal Field-Effect Transistor, 50V, 2-Element, N-Channel, Silicon, Junction FET, PL
LS-U406-SOIC	Linear	获取价格	Small Signal Field-Effect Transistor, 50V, 2-Element, N-Channel, Silicon, Junction FET, SO
LSU406-SOIC-8	Linear	获取价格	Small Signal Field-Effect Transistor, 50V, 2-Element, N-Channel, Silicon, Junction FET, SO
LS-U406-TO-71	Linear	获取价格	50V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71, TO-71, 6 PIN
LSU406-TO-71	Linear	获取价格	Small Signal Field-Effect Transistor, 50V, 2-Element, N-Channel, Silicon, Junction FET, HE
LSU406-TO-78	Linear	获取价格	Small Signal Field-Effect Transistor, 50V, 2-Element, N-Channel, Silicon, Junction FET, HE
LSU421	MICROSS	获取价格	N-CHANNEL JFET

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