5秒后页面跳转
捷配首页

Datasheet > LSU406-SOIC-8
LSU406-SOIC-8 PDF预览

LSU406-SOIC-8

更新时间： 2024-11-16 14:43:15
品牌 Logo 应用领域
凌特 - Linear 开关光电二极管晶体管
页数 文件大小 规格书
1页 276K
描述
Small Signal Field-Effect Transistor, 50V, 2-Element, N-Channel, Silicon, Junction FET, SOIC-8

阅读下载

中文翻译

获取价格

LSU406-SOIC-8 技术参数

生命周期：Contact Manufacturer零件包装代码：SOT
包装说明：SMALL OUTLINE, R-PDSO-G8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.68Is Samacsys：N
配置：COMPLEX最小漏源击穿电压：50 V
FET 技术：JUNCTION最大反馈电容 (Crss)：1.5 pF
JESD-30 代码：R-PDSO-G8元件数量：2
端子数量：8工作模式：DEPLETION MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

LSU406-SOIC-8 数据手册

  
LSU406  
LOW NOISE, LOW DRIFT  
MONOLITHIC DUAL  
N-CHANNEL JFET  
Linear Systems replaces discontinued Siliconix U406  
The LSU406 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET  
FEATURES  
LOW DRIFT  
LOW NOISE  
LOW PINCHOFF  
The LSU406 is a high-performance monolithic dual  
| V GS1‐2 / T| = 10µV/°C TYP.  
en = 6nV/Hz @ 10Hz TYP.  
Vp = 2.5V TYP.  
JFET featuring extremely low noise, tight offset voltage  
and low drift over temperature specifications, and is  
targeted for use in a wide range of precision  
instrumentation applications. The LSU406 features a 5-  
mV offset and 10-µV/°C drift. The LSU406 is a direct  
replacement for discontinued Siliconix LSU406.  
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted)  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
The 8 Pin P-DIP and 8 Pin SOIC provide ease of  
manufacturing, and the symmetrical pinout prevents  
improper orientation.  
‐65°C to +150°C  
+150°C  
Maximum Voltage and Current for Each Transistor – Note 1  
‐VGSS  
‐VDSO  
‐IG(f)  
Gate Voltage to Drain or Source  
Drain to Source Voltage  
Gate Forward Current  
50V  
50V  
10mA  
(See Packaging Information).  
Maximum Power Dissipation  
Device Dissipation @ Free Air – Total  
LSU406 Applications:  
300mW  
ƒ
ƒ
Wideband Differential Amps  
High-Speed,Temp-Compensated Single-Ended  
Input Amps  
High-Speed Comparators  
Impedance Converters and vibrations detectors.  
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED  
SYMBOL  
CHARACTERISTICS VALUE UNITS CONDITIONS  
ƒ
ƒ
| V GS1‐2 / T| max.  
DRIFT VS.  
TEMPERATURE  
OFFSET VOLTAGE  
80  
µV/°C  
VDG=10V, ID=200µA  
TA=‐55°C to +125°C  
VDG=10V, ID=200µA  
| V GS1‐2 | max.  
40  
mV  
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVGSS  
BVGGO  
CHARACTERISTICS  
Breakdown Voltage  
Gate‐To‐Gate Breakdown  
TRANSCONDUCTANCE  
Full Conduction  
MIN.  
50  
±50  
TYP.  
60  
‐‐  
MAX.  
‐‐  
‐‐  
UNITS  
V
V
CONDITIONS  
VDS = 0  
I G= 1nA  
ID=1nA  
ID= 0  
IS= 0  
YfSS  
YfS  
2000  
1000  
‐‐  
‐‐  
7000  
2000  
µmho  
µmho  
VDG= 10V  
VDG= 15V  
VGS= 0V f = 1kHz  
ID= 200µA f = 1kHz  
Typical Operation  
Click To Buy  
|YFS1‐2 / Y FS|  
Mismatch  
DRAIN CURRENT  
Full Conduction  
‐‐  
0.6  
3
%
IDSS  
|IDSS1‐2 / IDSS  
0.5  
‐‐  
‐‐  
1
10  
5
mA  
%
VDG= 10V  
VGS= 0V  
|
Mismatch at Full Conduction  
GATE VOLTAGE  
VGS(off) or Vp  
VGS(on)  
Pinchoff voltage  
Operating Range  
GATE CURRENT  
‐0.5  
‐‐  
‐‐  
‐‐  
‐2.5  
‐2.3  
V
V
VDS= 15V  
VDS=15V  
ID= 1nA  
ID=200µA  
‐IGmax.  
‐IGmax.  
‐IGSSmax.  
‐IGSSmax.  
Operating  
‐‐  
‐‐  
‐‐  
5
‐4  
‐‐  
‐‐  
5
‐15  
‐10  
100  
5
pA  
nA  
pA  
pA  
VDG= 15V ID= 200µA  
High Temperature  
At Full Conduction  
High Temperature  
OUTPUT CONDUCTANCE  
Full Conduction  
TA= +125°C  
VDS =0  
VDG= 15V  
TA= +125°C  
YOSS  
YOS  
‐‐  
‐‐  
‐‐  
20  
2
µmho  
µmho  
VDG= 10V  
VDG= 15V  
VGS= 0V  
Operating  
0.2  
ID= 500µA  
COMMON MODE REJECTION  
CMR  
‐20 log | V GS1‐2/ V DS  
|
95  
‐‐  
‐‐  
dB  
VDS = 10 to 20V  
ID=30µA  
NOISE  
Figure  
Voltage  
CAPACITANCE  
Input  
VDS= 15V VGS= 0V  
RG= 10M  
NF  
en  
‐‐  
‐‐  
‐‐  
20  
0.5  
‐‐  
dB  
nV/√Hz  
f= 100Hz NBW= 6Hz  
VDS=15V ID=200µA f=10Hz NBW=1Hz  
VDS= 15V ID= 200µA f= 1MHz  
CISS  
CRSS  
‐‐  
‐‐  
‐‐  
‐‐  
8
1.5  
pF  
pF  
Reverse Transfer  
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired  
PDIP / SOIC (Top View)  
Micross Components Europe  
Available Packages:  
LSU406 in PDIP / SOIC  
LSU406 available as bare die  
Please contact Micross for full package and die dimensions  
Tel: +44 1603 788967  
Email: chipcomponents@micross.com  
Web: http://www.micross.com/distribution  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or  
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.  
1

中文翻译

下载PDF

与LSU406-SOIC-8相关器件

型号 品牌 获取价格 描述 数据表
LS-U406-TO-71 Linear

获取价格

 		50V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71, TO-71, 6 PIN
LSU406-TO-71 Linear

获取价格

 		Small Signal Field-Effect Transistor, 50V, 2-Element, N-Channel, Silicon, Junction FET, HE
LSU406-TO-78 Linear

获取价格

 		Small Signal Field-Effect Transistor, 50V, 2-Element, N-Channel, Silicon, Junction FET, HE
LSU421 MICROSS

获取价格

 		N-CHANNEL JFET
LSU421(8PDIP) MICROSS

获取价格

 		Transistor
LSU421(8SOIC) MICROSS

获取价格

 		Transistor
LSU421(TO-71) MICROSS

获取价格

 		Transistor
LSU421(TO-78) MICROSS

获取价格

 		Transistor
LSU421_PDIP MICROSS

获取价格

 		N-CHANNEL JFET
LSU421_SOIC MICROSS

获取价格

 		N-CHANNEL JFET

与LSU406-SOIC-8相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证