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LS4150 PDF预览

LS4150

更新时间: 2024-11-16 11:43:43
品牌 Logo 应用领域
强茂 - PANJIT 二极管开关
页数 文件大小 规格书
3页 86K
描述
FAST SWITCHING SURFACE MOUNT DIODES

LS4150 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MELF
包装说明:ROHS COMPLIANT, GLASS, QUADROMELF-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.16
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-LELF-R2
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:0.2 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

LS4150 数据手册

 浏览型号LS4150的Datasheet PDF文件第2页浏览型号LS4150的Datasheet PDF文件第3页 
LS4150  
FAST SWITCHING SURFACE MOUNT DIODES  
Unit : inch (mm)  
QUADRO-MELF  
POWER  
500 mWatts  
VOLTAGE  
50 Volts  
FEATURES  
• Fast switching Speed.  
• Surface Mount Package Ideally Suited For Automatic Insertion.  
• Silicon Epitaxal Planar Construction.  
• In compliance with EU RoHS 2002/95/EC directives  
.067(1.
MECHANICALDATA  
• Case: QUADRD Melf, Glass  
Terminals: Solderable per MIL-STD-750, Method 2026  
• Polarity: Cathode Band  
.020(0.5)  
.012(0.3)  
.020(0.5)  
.012(0.3)  
• Marking: Cathode Band Only  
• Weight: 0.03 grams  
.146(3.7)  
.130(3.3)  
• Packing information  
T/R - 2.5K per 7" plastic reel  
T/R - 10K per 13” plastic reel  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted)  
PARAMETER  
Reverse Voltage  
SYMBOL  
VR  
LS4150  
50  
UNITS  
V
V
Peak Reverse Voltage  
VRM  
50  
RMS Voltage  
VRMS  
IF(AV )  
IFS M  
35  
V
Maximum Average Forward Current at TA =25OC And f > 50Hz  
Surge Forward Current at t < 1s and TJ=25 OC  
Power Dissipation at Tamb= 25 OC  
Maximum Forward Voltage at IF =200mA  
200  
500  
500  
1.0  
mA  
mA  
mW  
V
PTOT  
VF  
µA  
pF  
ns  
Maximum Leakage Current at VR= 50V  
Maximum Capacitance (Note 1)  
IR  
CJ  
trr  
0.1  
4
Maximum Reverse Recovery Time (Note 2)  
4
Typcal Thermal Resistance  
RθJA  
350  
OC / W  
OC  
Junction Temperature and Storage Temperature Range  
TJ,TS  
-65 to +175  
NOTE:  
1. CJ at VR=0, f=1MHZ  
2. From IF=10mA to IR=1mA, VR=6Volts, RL=100  
PAGE . 1  
STAD-FEB.06.2009  

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