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LNE150 PDF预览

LNE150

更新时间: 2024-10-19 03:51:51
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
2页 44K
描述
N-Channel Enhancement-Mode DMOS FETs

LNE150 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92配置:Single
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.36 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

LNE150 数据手册

 浏览型号LNE150的Datasheet PDF文件第2页 
LNE150  
Preliminary  
N-Channel Enhancement-Mode  
DMOS FETs  
Ordering Information  
Order Number / Package  
Product marking for TO-236AB:  
BVDSS  
/
RDS(ON)  
ID(ON)  
BVDGS  
(max)  
(min)  
TO-236AB*  
Die  
NEE  
500V  
1.0K  
3.0mA  
LNE150K1  
LNE150ND  
where = 2-week alpha date code  
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.  
7
Features  
Advanced DMOS Technology  
Free from secondary breakdown  
Low power drive requirement  
Ease of paralleling  
This low threshold Enhancement-mode (normally-off) transistor  
utilizesanadvancedDMOSstructureandSupertex’swell-proven  
silicon-gate manufacturing process. This combination produces  
devices with the power handling capabilities of bipolar transistors  
and with the high impedance and positive temperature coefficient  
inherent in MOS devices. Characteristic of all MOS structures,  
these devices are free from thermal runaway and thermally-  
induced secondary breakdown.  
Low CISS and fast switching speeds  
Excellent thermal stability  
Integral Source-Drain diode  
High input impedance and high gain  
Supertex’s DMOS FETs are ideally suited to a wide range of  
switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
Applications  
Logic level interface - ideal for TTL and CMOS  
Package Options  
Solid state relays  
Battery operated systems  
Photo voltaic drive  
Analog switches  
General purpose line drivers  
Telecom switches  
Source  
Absolute Maximum Ratings  
Drain-to-Source Voltage  
BVDSS  
BVDGS  
Gate  
Drain  
Drain-to-Gate Voltage  
TO-236AB  
Gate-to-Source Voltage  
-0.7V to +10V  
-55°C to +150°C  
300°C  
(SOT-23)  
top view  
Operating and Storage Temperature  
Soldering Temperature*  
* Distance of 1.6 mm from case for 10 seconds.  
Note: See Package Outline section for dimensions.  
7-21  

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