Datasheet > LNA2403F/LNA2402L(LN151F/LN151L)

LNA2403F/LNA2402L(LN151F/LN151L)

更新时间： 2024-12-03 23:47:35

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LNA2403F. LNA2402L (LN151F. LN151L) - GaAs Infrared Light Emitting Diodes

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LNA2403F/LNA2402L(LN151F/LN151L) 数据手册

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Infrared Light Emitting Diodes

Unit : mm

Glass window

LNA2403F

LNA2403F, LNA2402L

4.6 0.15

(LN151F, LN151L)

GaAs Infrared Light Emitting Diodes

2- 0.45 0.05

2.54 0.25

For optical control systems

Features

High-power output, high-efficiency : P_O= 7.5 mW (typ.)

1.0

0.2

Fast response and high-speed modulation capability :

0.15

t_r, t_f= 1 µs (typ.)

1.0

Infrared light emission close to monochromatic light :

λ_P= 950 nm (typ.)

Narrow directivity, suitable for effective use of radiant power

(LNA2402L (LN151L))

5.75 max.

1: Anode

2: Cathode

Wide directivity, matched for external optical systems

(LNA2403F (LN151F))

Unit : mm

LNA2402L

4.6 0.15

TO-18 standard type package

Glass lens

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

Ratings

Unit

Power dissipation

P_D

160

2- 0.45 0.05

2.54 0.25

Forward current (DC)

Pulse forward current

Reverse voltage (DC)

Operating ambient temperature

Storage temperature

I_F

100

I_FP

V_R

T_opr

T_stg

1.0

–25 to +100

–30 to+100

˚C

0.2

˚C

0.15

1.0

f = 100 Hz, Duty cycle = 0.1 %

1: Anode

2: Cathode

5.75 max.

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Radiant power

Symbol

Conditions

min

typ

max

Unit

P_O

λ_P

∆λ

V_F

I_R

C_t

t_r

I_F= 100mA

7.5

950

Peak emission wavelength

Spectral half band width

Forward voltage (DC)

Reverse current (DC)

Capacitance between pins

Rise time

I_F= 100mA

V_R= 3V

1.3

1.6

µA

V_R= 0V, f = 1MHz

µs

I_FP= 100mA

Fall time

t_f

µs

LNA2403F

deg.

Half-power angle

The angle in which radiant intencity is 50%

LNA2402L

Note) The part numbers in the parenthesis show conventional part number.

12 3

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