LNA2601L

更新时间： 2024-12-03 22:31:11

品牌	Logo	应用领域
松下 - PANASONIC		二极管
页数	文件大小	规格书
2页	44K
描述
GaAs Infrared Light Emitting Diode

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LNA2601L 数据手册

Infrared Light Emitting Diodes

LNA2601L

GaAs Infrared Light Emitting Diode

Unit : mm

1.95±0.25

For optical control systems

1.4±0.2

3.0±0.3

ø1.1

R0.5

0.9

0.5

Features

High-power output, high-efficiency

Emitted light spectrum suited for silicon photodetectors

Infrared light emission close to monochromatic light : λ_P= 950 nm

Ultra-miniature, thin side-view type package

2-0.5±0.15

0.3±0.15

2.54

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

Ratings

Unit

1: Anode

2: Cathode

Power dissipation

P_D

I_F

Forward current (DC)

Pulse forward current

Reverse voltage (DC)

Operating ambient temperature

Storage temperature

I_FP

V_R

T_opr

T_stg

–25 to +85

– 40 to +100

˚C

f = 100 Hz, Duty cycle = 0.1 %

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Radiant power

Symbol

Conditions

min

typ

max

Unit

P_O

λ_P

∆λ

V_F

I_R

I_F= 50mA

1.5

Peak emission wavelength

Spectral half band width

Forward voltage (DC)

Reverse current (DC)

Capacitance between pins

Half-power angle

I_F= 50mA

950

I_F= 50mA

1.5

V_R= 3V

µA

C_t

V_R= 0V, f = 1MHz

The angle in which radiant intencity is 50%

deg.

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