Datasheet > LNA2603F(LN155)

LNA2603F(LN155)

更新时间： 2024-12-02 23:47:35

品牌	Logo	应用领域
松下 - PANASONIC		光电光电器件二极管
页数	文件大小	规格书
3页	56K
描述
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes

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LNA2603F(LN155) 数据手册

Infrared Light Emitting Diodes

LNA2603F (LN155)

GaAs Infrared Light Emitting Diode

Unit : mm

For optical control systems

2.1±0.15

4.5±0.15

3.5±0.15

1.6±0.15

0.8±0.1

Features

High-power output, high-efficiency : P_O= 6 mW (typ.)

Emitted light spectrum suited for silicon photodetectors :

λ_P= 940 nm (typ.)

Long lifetime, high reliability

Thin side-view type package

0.45±0.15

2-1.2±0.3

2-0.45±0.15

2.54

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Power dissipation

Forward

Symbol

Ratings

160

Unit

1: Anode

2: Cathode

P_D

current

(DC1)0I0

1.5

Pulse forward current

I_FP

Reverse

voltage

(DC)V3

–25 to +85

– 40 to +100

Operating ambient temperature

Storage temperature

T_opr

˚C

T_stg

˚C

f = 100 Hz, Duty cycle = 0.1 %

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Radiant power

Symbol

P_O

Conditions

min

typ

max

Unit

I_F= 50mA

Peak emission wavelength

Spectral half band width

λ_P

I_F= 50mA

940

∆λ

Forward

Reverse

voltage

current

(DIC)=V100mA

1.3

1.6

(VD_RC=)I3V

µA

Capacitance between pins

Rise time

C_t

V_R= 0V, f = 1MHz

t_r

t_f

µs

I_FP= 100mA

Fall time

µs

Half-power angle

The angle in which radiant intencity is 50%

deg.

Note)The part number in the parenthesis shows conventional part number.

12 3

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