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LMV221

更新时间： 2024-02-26 23:55:50
品牌 Logo 应用领域
美国国家半导体 - NSC /
页数 文件大小 规格书
32页 2936K
描述
50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for

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LMV221 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SON
包装说明：HVSON,针数：6
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：6 weeks
风险等级：5.06模拟集成电路 - 其他类型：ANALOG CIRCUIT
JESD-30 代码：R-PDSO-N6JESD-609代码：e3
长度：2.5 mm湿度敏感等级：1
功能数量：1端子数量：6
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：HVSON
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度（摄氏度）：260座面最大高度：0.8 mm
最大供电电压 (Vsup)：3.3 V最小供电电压 (Vsup)：2.7 V
表面贴装：YES温度等级：INDUSTRIAL
端子面层：Matte Tin (Sn)端子形式：NO LEAD
端子节距：0.65 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：2.2 mm
Base Number Matches：1

LMV221 数据手册

 浏览型号LMV221的Datasheet PDF文件第2页浏览型号LMV221的Datasheet PDF文件第3页浏览型号LMV221的Datasheet PDF文件第4页浏览型号LMV221的Datasheet PDF文件第6页浏览型号LMV221的Datasheet PDF文件第7页浏览型号LMV221的Datasheet PDF文件第8页 
Symbol  
ST  
Parameter  
Condition  
Min  
(Note 6)  
Typ  
(Note 7)  
Max  
(Note 6)  
Units  
Temperature Sensitivity  
25°C < TA < 85°C, (Note 8)  
PIN = −10 dBm  
f = 50 MHz  
−12.4  
−13.7  
−14.6  
−15.2  
−16.5  
−18.1  
−8.85  
−9.3  
−8.9  
−9.4  
−5.3  
−5  
f = 900 MHz  
f = 1855 MHz  
f = 2500 MHz  
f = 3000 MHz  
f = 3500 MHz  
f = 50 MHz  
−10  
−5.6  
−6.5  
−7.9  
−9  
mdB/°C  
−10.8  
−12.2  
−13.5  
−5.9  
PMAX  
PMIN  
DR  
Maximum Input Power for  
ELC = 1 dB(Note 8)  
f = 900 MHz  
f = 1855 MHz  
f = 2500 MHz  
f = 3000 MHz  
f = 3500 MHz  
f = 50 MHz  
−6.1  
−8.3  
−5.5  
dBm  
dBm  
dB  
−6  
−4.2  
−5.4  
−3.7  
−7.2  
−2.7  
Minimum Input Power for  
ELC = 1 dB (Note 8)  
−40.3  
−44.2  
−42.9  
−40.4  
−38.4  
−35.3  
34.5  
−38.9  
−42.9  
−41.2  
−38.6  
−35.8  
−31.9  
f = 900 MHz  
f = 1855 MHz  
f = 2500 MHz  
f = 3000 MHz  
f = 3500 MHz  
f = 50 MHz  
Dynamic Range for ELC = 1 dB  
(Note 8)  
31.5  
34.4  
34  
f = 900 MHz  
f = 1855 MHz  
f = 2500 MHz  
f = 3000 MHz  
f = 3500 MHz  
38.1  
37.4  
33.8  
32.4  
26.2  
36.1  
34.8  
32.7  
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is  
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.  
Note 2: Human body model, applicable std. MIL-STD-883, Method 3015.7. Machine model, applicable std. JESD22–A115–A (ESD MM std of JEDEC). Field-  
Induced Charge-Device Model, applicable std. JESD22–C101–C. (ESD FICDM std. of JEDEC)  
Note 3: The maximum power dissipation is a function of TJ(MAX) , θJA. The maximum allowable power dissipation at any ambient temperature is  
PD = (TJ(MAX) - TA)/θJA. All numbers apply for packages soldered directly into a PC board.  
Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating  
of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where  
TJ > TA.  
Note 5: Power in dBV = dBm + 13 when the impedance is 50Ω.  
Note 6: All limits are guaranteed by design or statistical analysis.  
Note 7: Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will  
also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.  
Note 8: All limits are guaranteed by design and measurements which are performed on a limited number of samples. Limits represent the mean ±3–sigma values.  
The typical value represents the statistical mean value.  
Note 9: This parameter is guaranteed by design and/or characterization and is not tested in production.  
5
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