生命周期: | Active | 零件包装代码: | SOIC |
包装说明: | CERAMIC, SOIC-10 | 针数: | 10 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.36 |
Is Samacsys: | N | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 10 µA |
25C 时的最大偏置电流 (IIB): | 10 µA | 最小共模抑制比: | 57 dB |
标称共模抑制比: | 62 dB | 频率补偿: | YES |
最大输入失调电压: | 2000 µV | JESD-30 代码: | R-CDSO-G10 |
长度: | 6.858 mm | 低-偏置: | NO |
低-失调: | NO | 微功率: | NO |
湿度敏感等级: | 1 | 负供电电压上限: | -7 V |
标称负供电电压 (Vsup): | -5 V | 功能数量: | 2 |
端子数量: | 10 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | SOP | 封装等效代码: | SOP10,.45 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 功率: | NO |
电源: | +-5 V | 可编程功率: | NO |
认证状态: | Not Qualified | 筛选级别: | MIL-STD-883 |
座面最大高度: | 2.34 mm | 标称压摆率: | 550 V/us |
子类别: | Operational Amplifier | 最大压摆率: | 12.5 mA |
供电电压上限: | 7 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | BIPOLAR |
温度等级: | MILITARY | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 总剂量: | 300k Rad(Si) V |
标称均一增益带宽: | 300000 kHz | 最小电压增益: | 450 |
宽带: | YES | 宽度: | 6.121 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
5962F0254501VZA | TI |
完全替代 |
双路宽带、低噪声、电压反馈运算放大器 | NAC | 10 | -55 to 125 | |
LMH6628WG-QML | TI |
功能相似 |
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