生命周期: | Active | 零件包装代码: | SOIC |
包装说明: | CERAMIC, SOIC-10 | 针数: | 10 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | Factory Lead Time: | 6 weeks |
风险等级: | 5.4 | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 10 µA |
25C 时的最大偏置电流 (IIB): | 10 µA | 最小共模抑制比: | 57 dB |
标称共模抑制比: | 62 dB | 频率补偿: | YES |
最大输入失调电压: | 2000 µV | JESD-30 代码: | R-CDSO-G10 |
JESD-609代码: | e0 | 长度: | 6.858 mm |
低-偏置: | NO | 低-失调: | NO |
微功率: | NO | 湿度敏感等级: | 1 |
负供电电压上限: | -7 V | 标称负供电电压 (Vsup): | -5 V |
功能数量: | 2 | 端子数量: | 10 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | SOP |
封装等效代码: | SOP10,.45 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
功率: | NO | 电源: | +-5 V |
可编程功率: | NO | 认证状态: | Not Qualified |
筛选级别: | MIL-STD-883 | 座面最大高度: | 2.34 mm |
最小摆率: | 300 V/us | 标称压摆率: | 550 V/us |
子类别: | Operational Amplifier | 最大压摆率: | 12.5 mA |
供电电压上限: | 7 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | BIPOLAR |
温度等级: | MILITARY | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
总剂量: | 300k Rad(Si) V | 标称均一增益带宽: | 300000 kHz |
最小电压增益: | 450 | 宽带: | YES |
宽度: | 6.121 mm | Base Number Matches: | 1 |
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