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LMC6061IMX PDF预览

LMC6061IMX

更新时间: 2024-11-23 20:24:27
品牌 Logo 应用领域
美国国家半导体 - NSC 放大器光电二极管
页数 文件大小 规格书
16页 328K
描述
IC OP-AMP, 1300 uV OFFSET-MAX, 0.1 MHz BAND WIDTH, PDSO8, SOIC-8, Operational Amplifier

LMC6061IMX 技术参数

是否Rohs认证:不符合生命周期:Transferred
零件包装代码:SOIC包装说明:SOIC-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.04Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.000004 µA25C 时的最大偏置电流 (IIB):0.000004 µA
最小共模抑制比:63 dB标称共模抑制比:85 dB
频率补偿:YES最大输入失调电压:1300 µV
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.9 mm低-偏置:YES
低-失调:NO微功率:YES
湿度敏感等级:1负供电电压上限:
标称负供电电压 (Vsup):功能数量:1
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TAPE AND REEL峰值回流温度(摄氏度):235
功率:NO电源:5/15 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:1.75 mm最小摆率:0.007 V/us
标称压摆率:0.035 V/us子类别:Operational Amplifiers
最大压摆率:0.048 mA供电电压上限:16 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30标称均一增益带宽:100 kHz
最小电压增益:35000宽带:NO
宽度:3.9 mmBase Number Matches:1

LMC6061IMX 数据手册

 浏览型号LMC6061IMX的Datasheet PDF文件第2页浏览型号LMC6061IMX的Datasheet PDF文件第3页浏览型号LMC6061IMX的Datasheet PDF文件第4页浏览型号LMC6061IMX的Datasheet PDF文件第5页浏览型号LMC6061IMX的Datasheet PDF文件第6页浏览型号LMC6061IMX的Datasheet PDF文件第7页 
April 2001  
LMC6061  
Precision CMOS Single Micropower Operational  
Amplifier  
n Ultra low supply current: 20 µA  
n Operates from 4.5V to 15V single supply  
n Ultra low input bias current: 10 fA  
n Output swing within 10 mV of supply rail, 100k load  
n Input common-mode range includes V−  
n High voltage gain: 140 dB  
General Description  
The LMC6061 is a precision single low offset voltage, mi-  
cropower operational amplifier, capable of precision single  
supply operation. Performance characteristics include ultra  
low input bias current, high voltage gain, rail-to-rail output  
swing, and an input common mode voltage range that in-  
cludes ground. These features, plus its low power consump-  
tion, make the LMC6061 ideally suited for battery powered  
applications.  
n Improved latchup immunity  
Applications  
n Instrumentation amplifier  
n Photodiode and infrared detector preamplifier  
n Transducer amplifiers  
n Hand-held analytic instruments  
n Medical instrumentation  
Other applications using the LMC6061 include precision  
full-wave rectifiers, integrators, references, sample-and-hold  
circuits, and true instrumentation amplifiers.  
This device is built with National’s advanced double-Poly  
Silicon-Gate CMOS process.  
For designs that require higher speed, see the LMC6081  
precision single operational amplifier.  
n D/A converter  
n Charge amplifier for piezoelectric transducers  
For a dual or quad operational amplifier with similar features,  
see the LMC6062 or LMC6064 respectively.  
PATENT PENDING  
Features  
(Typical Unless Otherwise Noted)  
n Low offset voltage: 100 µV  
Connection Diagram  
Distribution of LMC6061  
Input Offset Voltage  
(TA = +25˚C)  
8-Pin DIP/SO  
01142201  
Top View  
01142215  
© 2001 National Semiconductor Corporation  
DS011422  
www.national.com  

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