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LMC6061IMX/NOPB PDF预览

LMC6061IMX/NOPB

更新时间: 2024-11-27 11:12:19
品牌 Logo 应用领域
德州仪器 - TI 放大器光电二极管运算放大器
页数 文件大小 规格书
24页 1346K
描述
精密 CMOS 单路微功耗运算放大器 | D | 8 | -40 to 85

LMC6061IMX/NOPB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:1.04
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):1e-7 µA25C 时的最大偏置电流 (IIB):0.000004 µA
最小共模抑制比:68 dB标称共模抑制比:85 dB
频率补偿:YES最大输入失调电流 (IIO):0.000002 µA
最大输入失调电压:350 µVJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
低-偏置:YES低-失调:NO
微功率:YES湿度敏感等级:1
负供电电压上限:标称负供电电压 (Vsup):
功能数量:1端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE包装方法:TR
峰值回流温度(摄氏度):260功率:NO
电源:5/15 V可编程功率:NO
认证状态:Not Qualified座面最大高度:1.75 mm
最小摆率:0.007 V/us标称压摆率:0.035 V/us
子类别:Operational Amplifier最大压摆率:0.024 mA
供电电压上限:16 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:100 kHz最小电压增益:35000
宽带:NO宽度:3.91 mm
Base Number Matches:1

LMC6061IMX/NOPB 数据手册

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LMC6061  
www.ti.com  
SNOS648D NOVEMBER 1994REVISED MARCH 2013  
PRECISION CMOS SINGLE MICROPOWER OPERATIONAL AMPLIFIER  
Check for Samples: LMC6061  
1
FEATURES  
DESCRIPTION  
The LMC6061 is a precision single low offset voltage,  
micropower operational amplifier, capable of  
precision single supply operation. Performance  
characteristics include ultra low input bias current,  
high voltage gain, rail-to-rail output swing, and an  
input common mode voltage range that includes  
ground. These features, plus its low power  
consumption, make the LMC6061 ideally suited for  
battery powered applications.  
2
(Typical Unless Otherwise Noted)  
Low Offset Voltage: 100 µV  
Ultra Low Supply Current: 20 μA  
Operates From 4.5V to 15V Single Supply  
Ultra Low Input Bias Current: 10 fA  
Output Swing Within 10 mV of Supply Rail,  
100k Load  
Input Common-mode Range Includes V−  
Other applications using the LMC6061 include  
precision full-wave rectifiers, integrators, references,  
sample-and-hold circuits, and true instrumentation  
amplifiers.  
High Voltage Gain: 140 dB  
Improved Latchup Immunity  
APPLICATIONS  
This device is built with TI's advanced double-Poly  
Silicon-Gate CMOS process.  
Instrumentation Amplifier  
For designs that require higher speed, see the  
LMC6081 precision single operational amplifier.  
Photodiode and Infrared Detector Preamplifier  
Transducer Amplifiers  
For a dual or quad operational amplifier with similar  
features, see the LMC6062 or LMC6064 respectively.  
Hand-held Analytic Instruments  
Medical Instrumentation  
PATENT PENDING  
D/A Converter  
Charge Amplifier for Piezoelectric Transducers  
Connection Diagrams  
Figure 1. 8-Pin PDIP/SOIC  
Top View  
Figure 2. Distribution of LMC6061 Input Offset  
Voltage (TA = +25°C)  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 1994–2013, Texas Instruments Incorporated  

LMC6061IMX/NOPB 替代型号

型号 品牌 替代类型 描述 数据表
LMC6482AIMX/NOPB TI

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LMC6482IMX/NOPB TI

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LMC6482AIM/NOPB TI

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Ultra-low Bias Current, Precision CMOS Rail-to-Rail Input and Output Dual Operational Ampl

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