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LMC6061AIM PDF预览

LMC6061AIM

更新时间: 2024-10-31 22:47:03
品牌 Logo 应用领域
美国国家半导体 - NSC 运算放大器
页数 文件大小 规格书
12页 315K
描述
Precision CMOS Single Micropower Operational Amplifier

LMC6061AIM 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:SOIC包装说明:SOIC-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.04放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.000004 µA
最小共模抑制比:72 dB标称共模抑制比:85 dB
频率补偿:YES最大输入失调电压:900 µV
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.9 mm低-偏置:YES
低-失调:YES微功率:YES
湿度敏感等级:1负供电电压上限:
标称负供电电压 (Vsup):功能数量:1
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):235功率:NO
电源:5/15 V可编程功率:NO
认证状态:Not Qualified座面最大高度:1.75 mm
最小摆率:0.01 V/us标称压摆率:0.035 V/us
子类别:Operational Amplifiers最大压摆率:0.038 mA
供电电压上限:16 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
标称均一增益带宽:100 kHz最小电压增益:50000
宽带:NO宽度:3.9 mm
Base Number Matches:1

LMC6061AIM 数据手册

 浏览型号LMC6061AIM的Datasheet PDF文件第2页浏览型号LMC6061AIM的Datasheet PDF文件第3页浏览型号LMC6061AIM的Datasheet PDF文件第4页浏览型号LMC6061AIM的Datasheet PDF文件第5页浏览型号LMC6061AIM的Datasheet PDF文件第6页浏览型号LMC6061AIM的Datasheet PDF文件第7页 
November 1994  
LMC6061  
Precision CMOS Single Micropower Operational  
Amplifier  
n Low offset voltage: 100 µV  
n Ultra low supply current: 20 µA  
The LMC6061 is a precision single low offset voltage, mi-  
n Operates from 4.5V to 15V single supply  
General Description  
cropower operational amplifier, capable of precision single  
supply operation. Performance characteristics include ultra  
n Ultra low input bias current: 10 fA  
n Output swing within 10 mV of supply rail, 100k load  
n Input common-mode range includes V−  
n High voltage gain: 140 dB  
low input bias current, high voltage gain, rail-to-rail output  
swing, and an input common mode voltage range that in-  
cludes ground. These features, plus its low power consump-  
tion, make the LMC6061 ideally suited for battery powered  
applications.  
n Improved latchup immunity  
Other applications using the LMC6061 include precision  
full-wave rectifiers, integrators, references, sample-and-hold  
circuits, and true instrumentation amplifiers.  
Applications  
n Instrumentation amplifier  
n Photodiode and infrared detector preamplifier  
n Transducer amplifiers  
n Hand-held analytic instruments  
n Medical instrumentation  
n D/A converter  
n Charge amplifier for piezoelectric transducers  
This device is built with National’s advanced double-Poly  
Silicon-Gate CMOS process.  
For designs that require higher speed, see the LMC6081  
precision single operational amplifier.  
For a dual or quad operational amplifier with similar features,  
see the LMC6062 or LMC6064 respectively.  
PATENT PENDING  
Features  
(Typical Unless Otherwise Noted)  
Connection Diagram  
8-Pin DIP/SO  
DS011422-1  
Top View  
Ordering Information  
Package  
Temperature Range  
NSC  
Transport  
Media  
Drawing  
Military  
Industrial  
−40˚C to +85˚C  
LMC6061AIN  
LMC6061IN  
−55˚C to +125˚C  
8-Pin  
LMC6061AMN  
N08E  
Rail  
Molded DIP  
8-Pin  
LMC6061AIM  
LMC6061IM  
M08A  
J08A  
Rail  
Tape and Reel  
Rail  
Small Outline  
8-Pin  
LMC6061AMJ/883  
Ceramic DIP  
© 1999 National Semiconductor Corporation  
DS011422  
www.national.com  

LMC6061AIM 替代型号

型号 品牌 替代类型 描述 数据表
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