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LM2722M/NOPB

更新时间： 2024-10-27 20:56:07
品牌 Logo 应用领域
德州仪器 - TI 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
13页 761K
描述
3.2A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, SO-8

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LM2722M/NOPB 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：SOP, SOP8,.25针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.66
高边驱动器：YES接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
长度：4.9 mm湿度敏感等级：1
功能数量：1端子数量：8
最高工作温度：125 °C最低工作温度：-40 °C
标称输出峰值电流：3.2 A封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260电源：5 V
认证状态：Not Qualified座面最大高度：1.75 mm
子类别：MOSFET Drivers最大供电电压：7 V
最小供电电压：4 V标称供电电压：5 V
表面贴装：YES技术：CMOS
温度等级：AUTOMOTIVE端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
宽度：3.9 mmBase Number Matches：1

LM2722M/NOPB 数据手册

 浏览型号LM2722M/NOPB的Datasheet PDF文件第2页浏览型号LM2722M/NOPB的Datasheet PDF文件第3页浏览型号LM2722M/NOPB的Datasheet PDF文件第4页浏览型号LM2722M/NOPB的Datasheet PDF文件第5页浏览型号LM2722M/NOPB的Datasheet PDF文件第6页浏览型号LM2722M/NOPB的Datasheet PDF文件第7页 
NRND  
LM2722  
www.ti.com  
SNVS169D –NOVEMBER 2001–REVISED MARCH 2013  
LM2722 High Speed Synchronous/Asynchronous MOSFET Driver  
Check for Samples: LM2722  
1
FEATURES  
DESCRIPTION  
The LM2722, part of the LM2726 family, is designed  
2
•
•
•
•
•
Synchronous or Asynchronous Operation  
Adaptive Shoot-Through Protection  
Input Under-Voltage-Lock-Out  
Typical 20ns Internal Delay  
to be used with multi-phase controllers. This part  
differs from the LM2726 by changing the functionality  
of the SYNC_EN pin from a whole chip enable to a  
low side MOSFET enable. As a result, the SYNC_EN  
pin now provides control between Synchronous and  
Asynchronous operations. Having this control can be  
Plastic 8-pin SOIC package  
advantageous  
Asynchronous operations can be more efficient at  
very light loads.  
in  
portable  
systems  
since  
APPLICATIONS  
•
Driver for LM2723 Intel Mobile Northwood CPU  
Core Power Supply.  
The LM2722 drives both top and bottom MOSFETs in  
a push-pull structure simultaneously. It takes a logic  
level PWM input and splits it into two complimentary  
signals with a typical 20ns dead time in between. The  
built-in cross-conduction protection circuitry prevents  
the top and bottom FETs from turning on  
simultaneously. The cross-conduction protection  
circuitry detects both the driver outputs and will not  
turn on a driver until the other driver output is low.  
With a bias voltage of 5V, the peak sourcing and  
sinking current for each driver of the LM2722 is  
typically 3A. In an SOIC-8 package, each driver is  
able to handle 50mA average current. Input UVLO  
(Under-Voltage-Lock-Out) forces both driver outputs  
low to ensure proper power-up and power-down  
operation. The gate drive bias voltage needed by the  
high side MOSFET is obtained through an external  
bootstrap. Minimum pulse width is as low as 55ns.  
•
•
•
High Current DC/DC Power Supplies  
High Input Voltage Switching Regulators  
Fast Transient Microprocessors  
Typical Application  
+5  
10  
Note: for ultra low-frequency operation (such as  
skip mode at light load), D1 should be a fast  
recovery type diode instead of a Schottky.  
D1  
VIN (up to 35V)  
+
CIN  
C2  
1mF  
LM2722  
C1  
6
5
4
8
3
2
0.1mF  
Q1  
VCC CBOOT  
SYNC_EN SIGNAL  
PWM SIGNAL  
L1  
HG  
VOUT  
SYNC_EN  
1
7
PWM_IN SW  
+
COUT  
D2  
LG  
U1  
GND  
Q2  
NOTE  
TI is an Intel Mobile Voltage Positioning (IMVP) licensee.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2001–2013, Texas Instruments Incorporated  
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