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LM2725M/NOPB PDF预览

LM2725M/NOPB

更新时间： 2024-11-25 20:03:19
品牌 Logo 应用领域
德州仪器 - TI 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
16页 786K
描述
1.2A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, SO-8

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LM2725M/NOPB 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：SOP,针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.8
高边驱动器：YES接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
长度：4.9 mm湿度敏感等级：1
功能数量：1端子数量：8
标称输出峰值电流：1.2 A封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified座面最大高度：1.75 mm
最大供电电压：7 V最小供电电压：4 V
标称供电电压：5 V表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40宽度：3.9 mm
Base Number Matches：1

LM2725M/NOPB 数据手册

 浏览型号LM2725M/NOPB的Datasheet PDF文件第2页浏览型号LM2725M/NOPB的Datasheet PDF文件第3页浏览型号LM2725M/NOPB的Datasheet PDF文件第4页浏览型号LM2725M/NOPB的Datasheet PDF文件第5页浏览型号LM2725M/NOPB的Datasheet PDF文件第6页浏览型号LM2725M/NOPB的Datasheet PDF文件第7页 
LM2725, LM2726  
www.ti.com  
SNVS144D –NOVEMBER 2000–REVISED MARCH 2013  
LM2725/LM2726 High Speed Synchronous MOSFET Drivers  
Check for Samples: LM2725, LM2726  
1
FEATURES  
DESCRIPTION  
The LM2725/LM2726 is a family of dual MOSFET  
drivers that drive both the top MOSFET and bottom  
MOSFET in a push-pull structure simultaneously. It  
takes a logic level PWM input and splits it into two  
complimentary signals with a typical 20ns dead time  
in between. The built-in shoot-through protection  
circuitry prevents the top and bottom FETs from  
turning on simultaneously. With a bias voltage of 5V,  
the peak sourcing and sinking current for each driver  
of the LM2725 is about 1.2A and that of the LM2726  
is about 3A. In an SOIC-8 package, each driver is  
able to handle 50mA average current. When EN  
signal is asserted the input UVLO (Under Voltage  
Lock Out) ensures that all the driver outputs stay low  
until the supply rail exceeds the power-on threshold  
during system power on, or after the supply rail drops  
below power-on threshold by a specified hysteresis  
during system power down. The cross-conduction  
protection circuitry detects both the driver outputs and  
will not turn on a driver until the other driver output is  
low. The top gate bias voltage needed by the top  
MOSFET can be obtained through an external  
bootstrap structure. Minimum input pulse width is as  
low as 55ns.  
2
•
•
•
•
•
•
High Peak Output Current  
Adaptive Shoot-Through Protection  
36V SW Pin Absolute Maximum Voltage  
Input Under-Voltage-Lock-Out  
Typical 20ns Internal Delay  
Plastic 8-pin SOIC Package  
APPLICATIONS  
•
•
•
High Current DC/DC Power Supplies  
High Input Voltage Switching Regulators  
Microprocessors  
Typical Application  
+
5
10  
Note: for ultra low-frequency operation (such as  
skip mode at light load), D1 should be a fast  
recovery type diode instead of a Schottky.  
D1  
Vin (up to 35V)  
+
Cin  
LM2725/ LM2726  
C1  
C2  
6
5
4
8
3
2
1
7
1U  
0.1U  
Q1  
VCC CBOOT  
L1  
EN  
HG  
SW  
LG  
Vout  
PWM  
SIGNAL  
PWM_IN  
GND  
+
Cout  
Q2  
U1  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2000–2013, Texas Instruments Incorporated  
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