Datasheet > LL101A

LL101A

更新时间： 2024-11-06 03:51:27

品牌	Logo	应用领域
EIC		二极管
页数	文件大小	规格书
2页	35K
描述
SCHOTTKY BARRIER DIODES

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LL101A 数据手册

SCHOTTKY BARRIER DIODES

LL101A - LL101C

MiniMELF (SOD-80C)

FEATURES :

Cathode Mark

• For general purpose applications

• The LL101 series is a metal-on-silicon Schottky

barrier device which is protected by a PN junction

guard ring.

• The low forward voltage drop and fast switching

make it ideal for protection of MOS devices,

steering, biasing and coupling diodes for fast

switching and low logic level applications.

• This diode is also available in the DO-35 case with

type designation SD101A, B, C

f 0.063 (1.64)

0.055 (1.40)

0.019(0.48)

0.011(0.28)

0.142(3.6)

0.134(3.4)

Mounting Pad Layout

0.098 (2.50)

Max.

• Pb / RoHS Free

0.049 (1.25)Min.

MECHANICAL DATA :

Case: MiniMELF Glass Case (SOD-80C)

Weight: approx. 0.05g

0.079 (2.00)Min.

0.197 (5.00)

REF

Dimensions in inches and ( millimeters )

Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)

Parameter

Symbol

Value

Unit

LL101A

LL101B

LL101C

400⁽¹⁾

300⁽¹⁾

V_RRM

Repetitive Peak Reverse Voltage

I_FSM

Maximum Single Cycle Surge 10ms Square Wave

Power Dissipation (Infinite Heatsink)

Thermal Resistance Junction to Ambient Air

Junction Temperature

°C/W

°C

R_q

125⁽¹⁾

T_J

-55 to + 150 ⁽¹⁾

T_S

Storage temperature range

°C

Note: (1) Valid provided that electrodes are kept at ambient temperature.

Electrical Characteristics (T_J= 25°C unless otherwise noted)

Test Condition

Min

Typ

Max

Unit

Parameter

Symbol

LL101A

LL101B

LL101C

LL101A

LL101B

LL101C

LL101A

LL101B

LL101C

LL101A

LL101B

LL101C

0.41

0.40

0.39

1.00

0.95

0.90

V_(BR)R

Reverse Breakdown Voltage

I_R= 10 mA

V_R= 50 V

V_R= 40 V

V_R= 30 V

I_R

µA

Reverse Current

I_F= 1mA

V_F

Forward Voltage Drop

I_F= 15mA

I_F= I_R= 5mA ,

recover to 0.1I_R

Reverse Recovery Time

Trr

1.0

Page 1 of 2

Rev. 02 : March 24, 2005

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