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LL101B/D2 PDF预览

LL101B/D2

更新时间: 2024-01-21 20:28:26
品牌 Logo 应用领域
威世 - VISHAY 开关二极管
页数 文件大小 规格书
3页 75K
描述
Rectifier Diode, Schottky, 1 Element, 50V V(RRM), Silicon, GLASS, MINIMELF-2

LL101B/D2 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:MELF
包装说明:O-LELF-R2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.51其他特性:FAST SWITCHING
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.4 VJESD-30 代码:O-LELF-R2
JESD-609代码:e0最大非重复峰值正向电流:2 A
元件数量:1端子数量:2
最高工作温度:125 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:0.4 W认证状态:Not Qualified
最大重复峰值反向电压:50 V最大反向恢复时间:0.001 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:WRAP AROUND端子位置:END
Base Number Matches:1

LL101B/D2 数据手册

 浏览型号LL101B/D2的Datasheet PDF文件第2页浏览型号LL101B/D2的Datasheet PDF文件第3页 
LL101A thru LL101C  
Vishay Semiconductors  
formerly General Semiconductor  
Schottky Diodes  
Features  
• For general purpose applications  
MiniMELF (SOD-80C)  
• The LL101 series is a metal-on-silicon Schottky  
barrier device which is protected by a PN junction  
guard ring.  
Cathode Band  
• The low forward voltage drop and fast switching  
make it ideal for protection of MOS devices,  
steering, biasing and coupling diodes for fast  
switching and low logic level applications.  
.063 (1.6)  
.051 (1.3)  
Dia.  
• This diode is also available in the DO-35 case with  
type designation SD101A, B, C and in the SOD-  
123 case with type designation SD101AW,  
SD101BW, SD101CW.  
.019 (0.48)  
.011 (0.28)  
.146 (3.7)  
.130 (3.3)  
Mechanical Data  
Dimensions in inches and (millimeters)  
Case: MiniMELF Glass Case (SOD-80)  
Weight: approx. 0.05g  
Cathode Band Color: Green  
Packaging Codes/Options:  
D1/10K per 13reel (8mm tape), 20K/box  
D2/2.5K per 7reel (8mm tape), 20K/box  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
Value  
Unit  
LL101A  
LL101B  
LL101C  
60  
50  
40  
Peak Inverse Voltage  
VRRM  
V
Power Dissipation (Infinite Heatsink)  
Ptot  
IFSM  
RθJA  
Tj  
400(1)  
mW  
A
Maximum Single Cycle Surge 10µs Square Wave  
Thermal Resistance Junciton to Ambient  
Junction Temperature  
2
300(1)  
°CW  
°C  
125  
Storage Temperature Range  
TS  
55 to +150  
°C  
Note:  
(1) Valid provided that electrodes are kept at ambient temperature.  
Document Number 88205  
13-May-02  
www.vishay.com  
1

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