LL101A THUR LL101C
SMALL SIGNAL SCHOTTKY DIODES
S
E M I C O N D U C T O R
FEATURES
Mini-MELF
For general purpose applications
The LL101 series is a Metal-on-silicon junction Schottky barrier device which
is protected by a PN junction guard ring. The low forward voltage drop
and fast switching make it ideal for protection of MOS devices, steering,
biasing, and coupling diodes for fast switching and low logic level applications
These diodes are also available in the DO-35 case with the type
designation SD101A to SD101C ,in the SOD-123 case type with the type designation
SD101AW to SD101CW and in the SOD-323 case type with the type designation
SD101AWS to SD101CWS,in the Micro-MELF case with type designation MCL101 to MCL103
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: Mini-MELF glass case(SOD-80 )
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Value
Symbols
Units
Peak Reverse Voltage
LL101A
LL101B
LL101C
VRRM
VRRM
VRRM
60
50
40
V
V
400 1)
Power Dissipation (infinite Heat Sink)
Maximum Single cycle surge 10ms square wave
Junction temperature
mW
A
Ptot
IFSM
TJ
2.0
125
C
Storage Temperature Range
-55 to+150
C
TSTG
1) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Min.
Max.
Typ.
Unis
Symbols
LL101A
V
V
V
60
50
40
VRRM
VRRM
VRRM
Reverse breakover voltage
LL101B
LL101C
at IR=10mA
LL101A
LL101B
Leakage current at VR=50V
VR=40V
VR=30V
200
200
200
nA
nA
nA
IR
IR
IR
LL101C
0.41
0.4
0.39
1
0.95
0.9
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
VF
VF
VF
VF
VF
VF
Forward voltage drop at IF=1mA
V
V
V
V
V
V
IF=15mA
pF
pF
pF
CJ
CJ
CJ
2.0
2.1
2.2
LL101A
LL101B
LL101C
Junction Capacitance at VR=0V ,f=1MHz
trr
1
ns
Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR
2-37
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