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LH28F320S5B-L90 PDF预览

LH28F320S5B-L90

更新时间： 2024-11-09 15:37:11
品牌 Logo 应用领域
夏普 - SHARP 内存集成电路
页数 文件大小 规格书
51页 345K
描述
Flash, 2MX16, 100ns, PBGA80, 8 X 18 MM, PLASTIC, CSP, FBGA-80

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LH28F320S5B-L90 技术参数

生命周期：Obsolete包装说明：8 X 18 MM, PLASTIC, CSP, FBGA-80
Reach Compliance Code：unknown风险等级：5.75
最长访问时间：100 ns其他特性：100000 BLOCK ERASE CYCLES
备用内存宽度：8JESD-30 代码：R-PBGA-B80
长度：18 mm内存密度：33554432 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1端子数量：80
字数：2097152 words字数代码：2000000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：2MX16
封装主体材料：PLASTIC/EPOXY封装代码：TFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：PARALLEL编程电压：5 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM类型：NOR TYPE
宽度：8 mmBase Number Matches：1

LH28F320S5B-L90 数据手册

 浏览型号LH28F320S5B-L90的Datasheet PDF文件第2页浏览型号LH28F320S5B-L90的Datasheet PDF文件第3页浏览型号LH28F320S5B-L90的Datasheet PDF文件第4页浏览型号LH28F320S5B-L90的Datasheet PDF文件第5页浏览型号LH28F320S5B-L90的Datasheet PDF文件第6页浏览型号LH28F320S5B-L90的Datasheet PDF文件第7页 
LH28F320S5-L/S5H-L  
32 M-bit (4 MB x 8/2 MB x 16) Smart 5  
Flash Memories (Fast Programming)  
LH28F320S5-L/S5H-L  
DESCRIPTION  
• High performance read access time  
LH28F320S5-L90/S5H-L90  
The LH28F320S5-L/S5H-L flash memories with  
Smart 5 technology are high-density, low-cost,  
nonvolatile, read/write storage solution for a wide  
range of applications, having high programming  
performance is achieved through highly-optimized  
page buffer operations. Their symmetrically-blocked  
architecture, flexible voltage and enhanced cycling  
capability provide for highly flexible component  
suitable for resident flash arrays, SIMMs and  
memory cards. Their enhanced suspend  
capabilities provide for an ideal solution for code +  
data storage applications. For secure code storage  
applications, such as networking, where code is  
either directly executed out of flash or downloaded  
to DRAM, the LH28F320S5-L/S5H-L offer three  
levels of protection : absolute protection with VPP at  
GND, selective hardware block locking, or flexible  
software block locking. These alternatives give  
designers ultimate control of their code security  
needs. The LH28F320S5-L/S5H-L are conformed  
to the flash Scalable Command Set (SCS) and the  
Common Flash Interface (CFI) specification which  
enable universal and upgradable interface, enable  
the highest system/device data transfer rates and  
minimize device and system-level implementation  
costs.  
– 90 ns (5.0±0.25 V)/100 ns (5.0±0.5 V)  
LH28F320S5-L12/S5H-L12  
– 120 ns (5.0±0.5 V)  
• Enhanced automated suspend options  
– Write suspend to read  
– Block erase suspend to write  
– Block erase suspend to read  
• Enhanced data protection features  
– Absolute protection with VPP = GND  
– Flexible block locking  
– Erase/write lockout during power transitions  
• SRAM-compatible write interface  
• User-configurable x8 or x16 operation  
• High-density symmetrically-blocked architecture  
– Sixty-four 64 k-byte erasable blocks  
• Enhanced cycling capability  
– 100 000 block erase cycles  
– 6.4 million block erase cycles/chip  
• Low power management  
– Deep power-down mode  
– Automatic power saving mode decreases ICC  
in static mode  
• Automated write and erase  
– Command user interface  
– Status register  
• ETOXTM V nonvolatile flash technology  
FEATURES  
• Packages  
• Smart 5 technology  
– 56-pin SSOP (SSOP056-P-0600)  
– 80-ball CSP (FBGA080/064-P-0818)  
– 5 V VCC  
– 5 V VPP  
• High speed write performance  
– Two 32 byte page buffers  
– 2 µs/byte write transfer rate  
• Common Flash Interface (CFI)  
– Universal & upgradable interface  
• Scalable Command Set (SCS)  
ETOX is a trademark of Intel Corporation.  
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,  
etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.  
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