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LF411ACN/NOPB PDF预览

LF411ACN/NOPB

更新时间: 2024-11-21 21:04:59
品牌 Logo 应用领域
德州仪器 - TI 放大器光电二极管
页数 文件大小 规格书
16页 878K
描述
Low Offset, Low Drift JFET Input Operational Amplifier 8-PDIP 0 to 70

LF411ACN/NOPB 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP8,.3
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
Factory Lead Time:1 week风险等级:7.87
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.0002 µA25C 时的最大偏置电流 (IIB):0.0002 µA
标称共模抑制比:100 dB频率补偿:YES
最大输入失调电压:500 µVJESD-30 代码:R-PDIP-T8
长度:9.8171 mm低-偏置:YES
低-失调:YES湿度敏感等级:1
负供电电压上限:-22 V标称负供电电压 (Vsup):-15 V
功能数量:1端子数量:8
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP8,.3封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT APPLICABLE
电源:+-15 V认证状态:Not Qualified
座面最大高度:5.08 mm最小摆率:10 V/us
标称压摆率:15 V/us子类别:Operational Amplifier
最大压摆率:2.8 mA供电电压上限:22 V
标称供电电压 (Vsup):15 V表面贴装:NO
技术:BIPOLAR温度等级:COMMERCIAL
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:4000 kHz最小电压增益:25000
宽度:7.62 mmBase Number Matches:1

LF411ACN/NOPB 数据手册

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LF411-N  
www.ti.com  
SNOSBH6D APRIL 1998REVISED MARCH 2013  
LF411 Low Offset, Low Drift JFET Input Operational Amplifier  
Check for Samples: LF411-N  
1
FEATURES  
DESCRIPTION  
These devices are low cost, high speed, JFET input  
operational amplifiers with very low input offset  
voltage and specified input offset voltage drift. They  
require low supply current yet maintain a large gain  
bandwidth product and fast slew rate. In addition, well  
matched high voltage JFET input devices provide  
very low input bias and offset currents. The LF411 is  
pin compatible with the standard LM741 allowing  
designers to immediately upgrade the overall  
performance of existing designs.  
23  
Internally trimmed offset voltage: 0.5 mV(max)  
Input offset voltage drift: 10 μV/°C(max)  
Low input bias current: 50 pA  
Low input noise current: 0.01 pA/Hz  
Wide gain bandwidth: 3 MHz(min)  
High slew rate: 10V/μs(min)  
Low supply current: 1.8 mA  
High input impedance: 1012Ω  
These amplifiers may be used in applications such as  
high speed integrators, fast D/A converters, sample  
and hold circuits and many other circuits requiring low  
input offset voltage and drift, low input bias current,  
high input impedance, high slew rate and wide  
bandwidth.  
Low total harmonic distortion: 0.02%  
Low 1/f noise corner: 50 Hz  
Fast settling time to 0.01%: 2 μs  
Typical Connection  
Figure 1.  
Connection Diagram  
Note: Pin 4 connected to case.  
Figure 2. TO – Top View  
See Package Number NEV0008A  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
BI-FET II is a trademark of dcl_owner.  
2
3
All other trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 1998–2013, Texas Instruments Incorporated  

LF411ACN/NOPB 替代型号

型号 品牌 替代类型 描述 数据表
LF411ACN TI

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TL071CDT STMICROELECTRONICS

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