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LF411CDR PDF预览

LF411CDR

更新时间: 2024-11-20 23:15:15
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管输入元件PC
页数 文件大小 规格书
7页 171K
描述
JFET-INPUT OPERATIONAL AMPLIFIER

LF411CDR 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:1 week
风险等级:1.01Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:255502
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:D (R-PDSO-G8)
Samacsys Released Date:2016-08-18 08:24:29Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.0002 µA25C 时的最大偏置电流 (IIB):0.0002 µA
最小共模抑制比:70 dB标称共模抑制比:100 dB
频率补偿:YES最大输入失调电流 (IIO):0.0001 µA
最大输入失调电压:2000 µVJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.9 mm
低-偏置:YES低-失调:NO
微功率:NO湿度敏感等级:1
负供电电压上限:-18 V标称负供电电压 (Vsup):-15 V
功能数量:1端子数量:8
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE包装方法:TR
峰值回流温度(摄氏度):260功率:NO
电源:+-15 V可编程功率:NO
认证状态:Not Qualified座面最大高度:1.75 mm
最小摆率:8 V/us标称压摆率:15 V/us
子类别:Operational Amplifier最大压摆率:3.4 mA
供电电压上限:18 V标称供电电压 (Vsup):15 V
表面贴装:YES技术:JFET
温度等级:COMMERCIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:3000 kHz最小电压增益:15000
宽带:NO宽度:3.91 mm
Base Number Matches:1

LF411CDR 数据手册

 浏览型号LF411CDR的Datasheet PDF文件第2页浏览型号LF411CDR的Datasheet PDF文件第3页浏览型号LF411CDR的Datasheet PDF文件第4页浏览型号LF411CDR的Datasheet PDF文件第5页浏览型号LF411CDR的Datasheet PDF文件第6页浏览型号LF411CDR的Datasheet PDF文件第7页 
LF411  
JFET-INPUT OPERATIONAL AMPLIFIER  
SLOS011C – MARCH 1987 – REVISED OCTOBER 1997  
D OR P PACKAGE  
(TOP VIEW)  
Low Input Bias Current, 50 pA Typ  
Low Input Noise Current, 0.01 pA/Hz Typ  
Low Supply Current, 2 mA Typ  
BAL1  
IN–  
NC  
V
1
2
3
4
8
7
6
5
12  
High Input impedance, 10 Typ  
CC+  
IN+  
OUT  
Low Total Harmonic Distortion  
Low 1/f Noise Corner, 50 Hz Typ  
V
BAL2  
CC–  
Package Options Include Plastic  
Small-Outline (D) and Standard (P) DIPs  
NC – No internal connection  
description  
This device is a low-cost, high-speed, JFET-input operational amplifier with very low input offset voltage and  
amaximuminputoffsetvoltagedrift. Itrequireslowsupplycurrent, yetmaintainsalargegain-bandwidthproduct  
and a fast slew rate. In addition, the matched high-voltage JFET input provides very low input bias and offset  
currents.  
The LF411 can be used in applications such as high-speed integrators, digital-to-analog converters,  
sample-and-hold circuits, and many other circuits.  
The LF411C is characterized for operation from 0°C to 70°C. The LF411I is characterized for operation from  
–40°C to 85°C.  
symbol  
2
3
+
IN –  
IN +  
6
OUT  
1
5
BAL1  
BAL2  
AVAILABLE OPTIONS  
PACKAGE  
SMALL OUTLINE  
V
max  
IO  
T
A
PLASTIC DIP  
(P)  
AT 25°C  
(D)  
0°C to 70°C  
2 mV  
2 mV  
LF411CD  
LF411ID  
LF411CP  
LF411IP  
–40°C to 85°C  
The D packages are available taped and reeled. Add the suffix R to the  
device type (i.e., LF411CDR).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

LF411CDR 替代型号

型号 品牌 替代类型 描述 数据表
LF411CD TI

完全替代

JFET-INPUT OPERATIONAL AMPLIFIER
LF411CDRE4 TI

类似代替

JFET-INPUT OPERATIONAL AMPLIFIER

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