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LF147D/883 PDF预览

LF147D/883

更新时间: 2024-11-18 14:52:03
品牌 Logo 应用领域
美国国家半导体 - NSC 放大器
页数 文件大小 规格书
12页 278K
描述
IC QUAD OP-AMP, 8000 uV OFFSET-MAX, 4 MHz BAND WIDTH, CDIP14, HERMETIC SEALED, DIP-14, Operational Amplifier

LF147D/883 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:HERMETIC SEALED, DIP-14
针数:14Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.75放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.05 µA
25C 时的最大偏置电流 (IIB):0.0002 µA最小共模抑制比:80 dB
标称共模抑制比:100 dB频率补偿:YES
最大输入失调电流 (IIO):0.025 µA最大输入失调电压:8000 µV
JESD-30 代码:R-CDIP-T14JESD-609代码:e0
长度:19.304 mm低-偏置:YES
低-失调:NO负供电电压上限:-22 V
标称负供电电压 (Vsup):-20 V功能数量:4
端子数量:14最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DIP封装等效代码:DIP14,.3
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:+-15 V
认证状态:Not Qualified筛选级别:38535Q/M;38534H;883B
座面最大高度:4.572 mm最小摆率:8 V/us
标称压摆率:13 V/us子类别:Operational Amplifier
最大压摆率:11 mA供电电压上限:22 V
标称供电电压 (Vsup):20 V表面贴装:NO
技术:BIPOLAR温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:4000 kHz
最小电压增益:25000宽度:7.62 mm
Base Number Matches:1

LF147D/883 数据手册

 浏览型号LF147D/883的Datasheet PDF文件第2页浏览型号LF147D/883的Datasheet PDF文件第3页浏览型号LF147D/883的Datasheet PDF文件第4页浏览型号LF147D/883的Datasheet PDF文件第5页浏览型号LF147D/883的Datasheet PDF文件第6页浏览型号LF147D/883的Datasheet PDF文件第7页 
December 1994  
LF147/LF347 Wide Bandwidth  
Quad JFET Input Operational Amplifiers  
General Description  
The LF147 is a low cost, high speed quad JFET input opera-  
Features  
Y
Internally trimmed offset voltage  
5 mV max  
50 pA  
Y
tional amplifier with an internally trimmed input offset volt-  
TM  
Low input bias current  
Y
age (BI-FET II  
technology). The device requires a low  
Low input noise current  
0.01 pA/ Hz  
0
supply current and yet maintains a large gain bandwidth  
product and a fast slew rate. In addition, well matched high  
voltage JFET input devices provide very low input bias and  
offset currents. The LF147 is pin compatible with the stan-  
dard LM148. This feature allows designers to immediately  
upgrade the overall performance of existing LF148 and  
LM124 designs.  
Y
Wide gain bandwidth  
4 MHz  
Y
High slew rate  
13 V/ms  
Y
Low supply current  
7.2 mA  
12  
Y
High input impedance  
10 X  
Y
k
0.02%  
e
Low total harmonic distortion A  
10,  
V
e
Low 1/f noise corner  
e e b  
20 Vp-p, BW 20 Hz 20 kHz  
R
10k, V  
L
O
Y
Y
50 Hz  
The LF147 may be used in applications such as high speed  
integrators, fast D/A converters, sample-and-hold circuits  
and many other circuits requiring low input offset voltage,  
low input bias current, high input impedance, high slew rate  
and wide bandwidth. The device has low noise and offset  
voltage drift.  
Fast settling time to 0.01%  
2 ms  
Simplified Schematic  
Connection Diagram  
(/4 Quad  
Dual-In-Line Package  
TL/H/5647–1  
Top View  
TL/H/564713  
Order Number LF147J, LF347M, LF347BN,  
LF347N, LF147D/883 or LF147J/883*  
See NS Package Number D14E, J14A, M14A or N14A  
Ý
*Available per SMD 8102306, JM38510/11906.  
BI-FET IITM is a trademark of National Semiconductor Corporation.  
C
1995 National Semiconductor Corporation  
TL/H/5647  
RRD-B30M115/Printed in U. S. A.  

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