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LF147J/883 PDF预览

LF147J/883

更新时间: 2024-11-17 22:15:31
品牌 Logo 应用领域
美国国家半导体 - NSC 运算放大器
页数 文件大小 规格书
13页 409K
描述
Wide Bandwidth Quad JFET Input Operational Amplifiers

LF147J/883 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:DIP包装说明:DIP, DIP14,.3
针数:14Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.09放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.0002 µA
25C 时的最大偏置电流 (IIB):0.0002 µA最小共模抑制比:80 dB
标称共模抑制比:80 dB频率补偿:YES
最大输入失调电流 (IIO):0.025 µA最大输入失调电压:5000 µV
JESD-30 代码:R-GDIP-T14JESD-609代码:e0
长度:19.304 mm低-偏置:YES
低-失调:NO湿度敏感等级:1
负供电电压上限:-22 V标称负供电电压 (Vsup):-20 V
功能数量:4端子数量:14
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:CERAMIC, GLASS-SEALED封装代码:DIP
封装等效代码:DIP14,.3封装形状:RECTANGULAR
封装形式:IN-LINE包装方法:RAIL
峰值回流温度(摄氏度):NOT APPLICABLE电源:+-15 V
认证状态:Not Qualified筛选级别:MIL-STD-883
座面最大高度:5.08 mm最小摆率:8 V/us
标称压摆率:13 V/us子类别:Operational Amplifier
最大压摆率:11 mA供电电压上限:22 V
标称供电电压 (Vsup):20 V表面贴装:NO
技术:BIFET温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT APPLICABLE标称均一增益带宽:4000 kHz
最小电压增益:25000宽度:7.62 mm
Base Number Matches:1

LF147J/883 数据手册

 浏览型号LF147J/883的Datasheet PDF文件第2页浏览型号LF147J/883的Datasheet PDF文件第3页浏览型号LF147J/883的Datasheet PDF文件第4页浏览型号LF147J/883的Datasheet PDF文件第5页浏览型号LF147J/883的Datasheet PDF文件第6页浏览型号LF147J/883的Datasheet PDF文件第7页 
May 1999  
LF147/LF347  
Wide Bandwidth Quad JFET Input Operational Amplifiers  
General Description  
The LF147 is a low cost, high speed quad JFET input opera-  
tional amplifier with an internally trimmed input offset voltage  
Features  
n Internally trimmed offset voltage: 5 mV max  
n Low input bias current: 50 pA  
n Low input noise current:  
(BI-FET II technology). The device requires a low supply  
current and yet maintains a large gain bandwidth product  
and a fast slew rate. In addition, well matched high voltage  
JFET input devices provide very low input bias and offset  
currents. The LF147 is pin compatible with the standard  
LM148. This feature allows designers to immediately up-  
grade the overall performance of existing LF148 and LM124  
designs.  
n Wide gain bandwidth: 4 MHz  
n High slew rate: 13 V/µs  
n Low supply current: 7.2 mA  
n High input impedance: 1012Ω  
=
<
n Low total harmonic distortion AV 10,:  
0.02%  
=
=
=
RL 10k, VO 20 Vp-p, BW 20 Hz−20 kHz  
n Low 1/f noise corner: 50 Hz  
n Fast settling time to 0.01%: 2 µs  
The LF147 may be used in applications such as high speed  
integrators, fast D/A converters, sample-and-hold circuits  
and many other circuits requiring low input offset voltage,  
low input bias current, high input impedance, high slew rate  
and wide bandwidth. The device has low noise and offset  
voltage drift.  
Simplified Schematic  
Connection Diagram  
1
4  
Quad  
Dual-In-Line Package  
DS005647-1  
Note 1: Available per SMD #8102306, JM38510/11906.  
DS005647-13  
Top View  
Order Number LF147J, LF347M, LF347BN,  
LF347N or LF147J/883 (Note 1)  
See NS Package Number J14A, M14A or N14A  
BI-FET II is a trademark of National Semiconductor Corporation.  
© 1999 National Semiconductor Corporation  
DS005647  
www.national.com  

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