LD3503G-LF

更新时间： 2024-11-05 13:09:15

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
2页	27K
描述
Rectifier Diode,

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中文翻译

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数据手册

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LD3503G-LF 数据手册

WTE

PO WER SEM ICONDUCTORS

LD3500 – LD3506

35A 10mm LUCAS TYPE PRESS-FIT DIODE

Features

Diffused Junction

Low Leakage

Low Cost

High Surge Current Capability

Typical IR less than 20µA

Mechanical Data

10mm Lucas

Dim

Min

10.13

8.89

Max

10.18

9.4

Case: All Copper Case and Components

Hermetically Sealed

1.27

1.35

—

Terminals: Contact Areas Readily Solderable

Polarity: Cathode to Case(Reverse Units Are

Available Upon Request and Are Designated

By An “R” Suffix, i.e. LD3502R or LD3504R)

Polarity: Red Color Equals Standard,

Black Color Equals Reverse Polarity

Mounting Position: Any

29.84

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol LD3500 LD3501 LD3502 LD3503 LD3504 LD3505 LD3506 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

300

400

280

500

350

600

420

RMS Reverse Voltage

V^R(RMS)

I^O

210

Average Rectified Output Current @T_A= 150°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

400

Forward Voltage

@I_F= 80A

V^FM

I^RM

C^j

1.08

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

500

µA

Typical Junction Capacitance (Note 1)

300

1.0

Typical Thermal Resistance Junction to Case

(Note 2)

R^ꢀ^JC

K/W

°C

Operating and Storage Temperature Range

T^J, T^STG

-65 to +175

*Glass passivated forms are available upon request

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal Resistance: Junction to case, single side cooled.

LD3500 – LD3506

1 of 2

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与LD3503G-LF相关器件

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