Datasheet > LD3506-LF

LD3506-LF

更新时间： 2024-11-24 18:54:27

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
2页	27K
描述
Rectifier Diode, 1 Phase, 1 Element, 35A, 600V V(RRM), Silicon, ROHS COMPLIANT, PRESSFIT-1

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

LD3506-LF 数据手册

WTE

POWER SEMICONDUCTORS

LD3500 – LD3506

35A LUCAS TYPE PRESS-FIT DIODE

Features

Diffused Junction

Low Leakage

Low Cost

High Surge Current Capability

Typical IR less than 5.0µA

Anode +

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ C

Mechanical Data

10mm Lucas

Min

Dim

Max

10.16

8.60

1.31

—

10.07

8.20

Case: 10mm Lucas Type Press-Fit

Terminals: Contact Areas Readily Solderable

Polarity: Cathode to Case (Reverse Units Are

Available Upon Request and Are Designated

By A “R” Suffix, i.e. LD3502R or LD3504R)

Polarity: Red Color Equals Standard,

Black Color Equals Reverse Polarity

1.25

26.00

9.40

9.60

All Dimensions in mm

Mounting Position: Any

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 2

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol LD3500 LD3501 LD3502 LD3503 LD3504 LD3505 LD3506 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

300

400

280

500

350

600

420

RMS Reverse Voltage

V^R(RMS)

I^O

210

Average Rectified Output Current @T_C= 150°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

400

1.0

Forward Voltage

@I_F= 35A

V^FM

I^RM

Peak Reverse Current

@T_A= 25°C

5.0

500

µA

At Rated DC Blocking Voltage

@T_A= 100°C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Operating and Storage Temperature Range

C^j

300

1.2

°C/W

°C

R^ꢀ^JC

T^J, T^STG

-65 to +175

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal Resistance: Junction to case, single side cooled.

LD3500 – LD3506

1 of 2

中文翻译

下载PDF

与LD3506-LF相关器件

型号	品牌	获取价格	描述	数据表
LD3506R	WTE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 35A, 600V V(RRM), Silicon, PRESSFIT-1
LD3506R-LF	WTE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 35A, 600V V(RRM), Silicon, ROHS COMPLIANT, PRESSFIT-1
LD3520	WTE	获取价格	35A AVALANCHE LUCAS TYPE PRESS-FIT DIODE
LD3520R-LF	WTE	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 35A, 16V V(RRM), Silicon, ROHS COMPLIANT,
LD3521PGK-011	PERKINELMER	获取价格	Low-Cost Digital Linescan Camera
LD3522PGK-011	PERKINELMER	获取价格	Low-Cost Digital Linescan Camera
LD3524	WTE	获取价格	35A AVALANCHE LUCAS TYPE PRESS-FIT DIODE
LD3541PGK-011	PERKINELMER	获取价格	Low-Cost Digital Linescan Camera
LD3542PGK-011	PERKINELMER	获取价格	Low-Cost Digital Linescan Camera
LD3543PGK-011	PERKINELMER	获取价格	Low-Cost Digital Linescan Camera

与LD3506-LF相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

LD3506-LF

LD3506-LF 数据手册

与LD3506-LF相关器件

与LD3506-LF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

LD3506-LF

LD3506-LF 数据手册

与LD3506-LF相关器件

与LD3506-LF相关文章

您还可以找

您在本页遇到什么问题？