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LC3383ML-80 PDF预览

LC3383ML-80

更新时间: 2024-11-05 23:45:27
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LC3383ML-80 数据手册

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Ordering number : EN4430C  
CMOS LSI  
LC33832P, S, M, PL, SL, ML-70/80/10  
256 K (32768 words × 8 bits) Pseudo-SRAM  
Overview  
Package Dimensions  
The LC33832 series is composed of pseudo static RAM  
that operates on a single 5 V power supply and is  
organized as 32768 words × 8 bits. By using memory  
cells each composed of a single transistor and capacitor,  
together with peripheral CMOS circuitry, this series  
achieves ease of use with high density, high speed, and  
low power dissipation. The LC33832 series can easily  
accomplish auto-refresh and self-refresh by means of  
OE/RFSH input. As with asynchronous static RAM, WE  
input uses a system for incorporating input data at the WE  
rise, thereby facilitating interfacing with a microcomputer.  
unit: mm  
3012A-DIP28  
[LC33832P, PL]  
The LC33832 series features pin compatibility with 256 K  
static RAM (the LC36256A series), and available  
packages are the standard 28-pin DIP with widths of 600  
mil or 300 mil, and the SOP with a width of 450 mil.  
SANYO: DIP28  
CE-only refresh can be accomplished by selecting address  
256 (A0 to A7) within 4 ms.  
unit: mm  
Features  
• 32768 words × 8 bits configuration  
3133-DIP28  
• Single 5 V ±10% power supply  
[LC33832S, SL]  
• All input and output (I/O) TTL compatible  
• Fast access times and low power dissipation  
• 4 ms refresh using 256 refresh cycle  
• CE-only refresh, auto-refresh, and self-refresh  
• Low-power version: 100 µA self-refresh current  
• Package  
DIP28-pin (600 mil) plastic package: LC33832P, PL  
DIP28-pin (300 mil) plastic package: LC33832S, SL  
SOP28-pin (450 mil) plastic package: LC33832M, ML  
SANYO: DIP28  
• CE access time/OE access time/Cycle time/Current drain  
LC33832P, S, M, PL, SL, ML  
Parameter  
-70  
-80  
-10  
CE access time  
OE access time  
Cycle time  
70 ns  
30 ns  
80 ns  
35 ns  
100 ns  
40 ns  
115 ns  
65 mA  
130 ns  
160 ns  
50 mA  
Operating  
Standby  
60 mA  
Current drain  
1 mA/100 µA (L version)  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
22897HA (OT)/52595TH (OT)/N1993JN/40893JN A8-9957, 58, 59, No. 4430-1/9