Datasheet > LB122T

LB122T

更新时间： 2024-02-11 20:28:56

品牌	Logo	应用领域
DCCOM		晶体晶体管局域网
页数	文件大小	规格书
1页	225K
描述
TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR

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LB122T 数据手册

DC COMPONENTS CO., LTD.

LB122T

DISCRETE SEMICONDUCTORS

TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR

Description

Designed for use in medium power switching

applications.

TO-126

Pinning

1 = Emitter

2 = Collector

3 = Base

.304(7.72)

.285(7.52)

.105(2.66)

.095(2.41)

.152(3.86)

.138(3.50)

.041(1.05)

.037(0.95)

.055(1.39)

.045(1.14)

.154(3.91)

.150(3.81)

Absolute Maximum Ratings(TA=25oC)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (pulse)

Base Current (DC)

Symbol

VCBO

VCEO

VEBO

Rating

600

Unit

.279(7.09)

.275(6.99)

3oTyp

2 3

400

.052(1.32)

.048(1.22)

3oTyp

.620(15.75)

.600(15.25)

800

1600

100

.022

(0.55)

Typ

.032(0.81)

.028(0.71)

Base Current (pulse)

200

3oTyp

Total Power Dissipation(TC=25oC)

Junction Temperature

Storage Temperature

.189(4.80)

.171(4.34)

+150

-55 to +150

Dimensions in inches and (millimeters)

TSTG

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified)

Characteristic

Symbol

BVCBO

BVCEO

BVEBO

ICBO

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

600

IC=100µA

IC=10mA

IE=10µA

400

0.4

0.8

µA

VCB=600V

ICEO

VCE=400V

Emitter Cutoff Current

IEBO

VEB=6V

Collector-Emitter Saturation Voltage(1) VCE(sat)1

IC=100mA, IB=20mA

IC=300mA, IB=60mA

IC=100mA, IB=20mA

IC=0.1A, VCE=10V

IC=0.5A, VCE=10V

VCE(sat)2

Base-Emitter Saturation Voltage(1)

VBE(sat)

hFE1

hFE2

Toff

DC Current Gain(1)

Turn-Off Time

0.6

µS

IC=0.3A, VCC=100V, IB1=-IB2=0.06A

(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%

Classification of hFE1

Rank

28~37

33~40

Range

10~17

13~22

18~27

23~32

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