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LB123TB3 PDF预览

LB123TB3

更新时间: 2024-11-09 20:10:11
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
2页 156K
描述
Transistor

LB123TB3 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

LB123TB3 数据手册

 浏览型号LB123TB3的Datasheet PDF文件第2页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-126 Plastic-Encapsulate Transistors  
LB123T TRANSISTOR (NPN)  
TO-126  
FEATURES  
1. EMITTER  
2. COLLECTOR  
3. BASE  
z
z
z
High voltage, high speed power switch  
Switch regulators  
PWM inverter and Motor controls  
z
z
Solenoid and relay drivers  
Deflection circuits  
1 2 3  
MAXIMUM RATINGS* TA=25unless otherwise noted  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
600  
400  
8
Units  
Parameter  
v
Collector-Base Voltage  
Collector-Emitter Voltage  
V
V
Emitter-Base Voltage  
Collector Current -Continuous  
1
A
PC  
Collector Power Dissipation  
Junction Temperature  
1.25  
150  
-55-150  
W
Tj  
Tstg  
Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (Tamb=25℃  
unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
600  
400  
8
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=1mA, IE=0  
V(BR)CEO IC=10mA, IB=0  
V(BR)EBO IE=1mA, IC=0  
V
V
ICBO  
IEBO  
VCB=600V, IE=0  
VEB=8V, IC=0  
10  
10  
50  
μA  
μA  
Emitter cut-off current  
hFE(1)  
hFE(2)  
hFE(3)  
VCE=5V, IC=0.3A  
VCE=5V, IC=0.5A  
10  
10  
6
DC current gain *  
VCE=5V, IC=1A  
IC=100mA, IB=10mA  
IC=300mA, IB=30mA  
IC=100mA, IB=10mA  
IC=300mA, IB=30mA  
0.8  
0.9  
1.2  
V
V
V
V
Collector-emitter saturation voltage*  
Base-emitter saturation voltage*  
VCE(sat)  
VBE(sat)  
1.8  
*pulse test: pulse width380μs, Duty cycle≤2%.  
CLASSIFICATION OF hFE(1)  
Rank  
B1  
B2  
B3  
B4  
B5  
B6  
33-42  
B7  
B8  
43-50  
Range  
Marking  
10-17  
13-22  
18-27  
23-32  
28-37  
38-47  

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