Datasheet > LB123TB3

LB123TB3

更新时间： 2024-11-21 20:10:11

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
2页	156K
描述
Transistor

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中文翻译

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技术参数
数据手册

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LB123TB3 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

LB123TB3 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

LB123T TRANSISTOR (NPN)

TO-126

FEATURES

1. EMITTER

2. COLLECTOR

3. BASE

High voltage, high speed power switch

Switch regulators

PWM inverter and Motor controls

Solenoid and relay drivers

Deflection circuits

1 2 3

MAXIMUM RATINGS* T_A=25℃ unless otherwise noted

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

600

400

Units

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

P_C

Collector Power Dissipation

Junction Temperature

1.25

150

-55-150

℃

T_j

T_stg

Storage Temperature Range

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

600

400

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=1mA, I_E=0

V_(BR)CEOI_C=10mA, I_B=0

V_(BR)EBOI_E=1mA, I_C=0

I_CBO

I_EBO

V_CB=600V, I_E=0

V_EB=8V, I_C=0

μA

Emitter cut-off current

h_FE(1)

h_FE(2)

h_FE(3)

V_CE=5V, I_C=0.3A

V_CE=5V, I_C=0.5A

DC current gain *

V_CE=5V, I_C=1A

I_C=100mA, I_B=10mA

I_C=300mA, I_B=30mA

I_C=100mA, I_B=10mA

I_C=300mA, I_B=30mA

0.8

0.9

1.2

Collector-emitter saturation voltage*

Base-emitter saturation voltage*

V_CE(sat)

V_BE(sat)

1.8

*pulse test: pulse width≤380μs, Duty cycle≤2%.

CLASSIFICATION OF h_FE(1)

Rank

33-42

43-50

Range

Marking

10-17

13-22

18-27

23-32

28-37

38-47

中文翻译

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