HIGH POWER CW LASER
DIODE with WATER-COOLING,
FUNRYU-COOLING
PRELIMINARY DATA
L8410, L8412
Peltier-cooling Type, Water-cooling type, and Funryu-cooling type are available
FEATURES
High optical power : 20 to 30W/bar
High stability
Long life
High cost performance
Compact
APPLICATIONS
Pumping source for solid state lasers
Materials processing
Welding
Soldering
Front : L8412(Water-cooling Type), Back : L8410(Funryu-cooling Type)
Medical systems
Our high power laser diodes, L8410 and L8412, feature several advantages such as high stability with long life and
high cost performance with compact structure. They can be applied as light source to pump solid state lasers, for
material processing like welding or soldering, and for medical systems. The lasing areas consist of small laser emitters
arranged in line and are thus called “Bar” structure. A high CW output power as high as about 200W was achieved by
stacking seven Bars. Cooling methods can be selected from Peltier-cooling, Water-cooling and Funryu-cooling (patent
pending : Japan 8-139479, WO 00/11717). A high power laser module with a focusing lens is optionally available. A
power supply to operate them in quasi-CW mode is also available.
ABSOLUTE MAXIMUM RATINGS (Each bar)
Parameter
Symbol
L8410
Funryu-cooling Type
32
L8412
Water-cooling Type
22
Unit
-
Cooling Type
Radiant Output Power / bar
Reverse Voltage
φe
W
V
VR
2
Operating Temperature
Storage Temperature
Top
˚c
˚c
+5 to +35
-20 to +40
Tstg
CHARACTERISTICS (Each bar,Ta=20˚c)
L8410
L8412
Parameter
Symbol
Unit
Conditions
Value
30
37
808
4
Value
Conditions
20
28
808
4
W
φe
Radiant Output Power / bar
φe=30W
φe=20W
φe=20W
φe=20W
φe=20W
A
nm
IF
Forward Current
φe=30W
φe=30W
φe=30W
λ
p
Peak Emission Wavelength
Spectral Radiation Half Bandwidth
Forward Voltage
nm
∆λ
1.9
10
35
12
10
7
1.85
10
35
10
10
-
V
VF
˚ (degree)
˚ (degree)
A
Beam Spread Angle : Parallel
: Vertical
θ//
θ⊥
Ith
-
FWHM
FWHM
Lasing Threshold Current
Array Length
mm
stack
Maximum Number of Stacks
-
*Contact sales stuff for emitting wave-length and radiant output power (φe) other than above.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2000 Hamamatsu Photonics K.K.