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L8411

更新时间： 2024-11-24 22:31:39
品牌 Logo 应用领域
HAMAMATSU 光电二极管激光二极管高功率电源
页数 文件大小 规格书
2页 75K
描述
HIGH POWER QUASI-CW LASER DIODE

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中文翻译

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L8411 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.84配置：SINGLE
功能数量：1最高工作温度：35 °C
最低工作温度：15 °C光电设备类型：LASER DIODE
标称输出功率：100000 mW峰值波长：808 nm
最大阈值电流：25000 mABase Number Matches：1

L8411 数据手册

 浏览型号L8411的Datasheet PDF文件第2页 
HIGH POWER QUASI-CW  
LASER DIODE L8411  
PRELIMINARY DATA  
High power Quasi-CW operation  
FEATURES  
High optical power : 50 to 100W/bar in average  
High stability  
Long life  
High cost performance  
APPLICATIONS  
Pumping source for solid state lasers  
Materials processing  
Welding  
Soldering  
Medical systems  
Our high power Quasi-CW laser diode, L8411, features several advantages such as high stability with long life, high  
cost performance with compact structure, and higher peak intensity. It can be applied as light source to pump solid  
state lasers, for material processing like welding or soldering, and for medical systems. The lasing areas consist of  
small laser emitters arranged in line and are thus called “Bar” structure. A high Quasi-CW output power as high as  
10kW at peak was achieved by stacking ten Bars. Cooling methods can be selected from Peltier-cooling, water-cooling  
and Funryu-cooling (patent pending : Japan 8-139479, WO 00/11717). A high power laser module with a focusing lens  
and a driving electronics are optionally available.  
ABSOLUTE MAXIMUM RATINGS (Each bar)  
High Duty Ratio Type  
Parameter  
Radiant Output Power / bar  
Reverse Voltage  
Symbol  
Low Duty Ratio Type  
Unit  
W
55  
2.0  
200  
20  
φe  
VR  
105  
2.0  
200  
1
V
Pulse Duration  
Tw  
µsec  
%
Duty Ratio  
DR  
+15 to +35  
-20 to +40  
˚c  
˚c  
Operating Temperature  
Storage Temperature  
Top  
Tstg  
CHARACTERISTICS (Each bar,Ta=20˚c)  
Low Duty Ratio Type  
High Duty Ratio Type  
Parameter  
Unit  
Symbol  
Value  
100  
120  
808  
4
Conditions  
Value  
50  
80  
808  
5
Conditions  
Radiant Output Power / bar  
Forward Current  
φe  
IF  
W
φe=100W  
φe=100W  
φe=100W  
φe=100W  
φe=50W  
A
nm  
φe=50W  
φe=50W  
φe=50W  
Peak Emission Wavelength  
Spectral Radiation Half Bandwidth  
Forward Voltage  
λp  
∆λ  
VF  
θ//  
θ⊥  
Ith  
-
nm  
2.0  
10  
1.9  
10  
35  
20  
10  
6
V
Beam Spread Angle : Parallel  
: Vertical  
˚ (degree)  
˚ (degree)  
A
FWHM  
FWHM  
35  
25  
Lasing Threshold Current  
Array Length  
10  
mm  
Maximum Number of Stacks  
25  
-
stack  
*Contact sales stuff for emitting wave-length and radiant output power (φe) other than above.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.  
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2000 Hamamatsu Photonics K.K.  
12

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