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KSR1006TA PDF预览

KSR1006TA

更新时间: 2024-11-08 14:43:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
4页 35K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

KSR1006TA 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.92Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 4.7最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):68JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

KSR1006TA 数据手册

 浏览型号KSR1006TA的Datasheet PDF文件第2页浏览型号KSR1006TA的Datasheet PDF文件第3页浏览型号KSR1006TA的Datasheet PDF文件第4页 
KSR1006  
Switching Application (Bias Resistor Built In)  
Switching circuit, Inverter, Interface circuit, Driver Circuit  
Built in bias Resistor (R =10K, R =47K)  
1
2
Complement to KSR2006  
TO-92  
1
1. Emitter 2. Collector 3. Base  
Equivalent Circuit  
C
R1  
B
R2  
NPN Epitaxial Silicon Transistor  
E
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
50  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
50  
V
CEO  
EBO  
10  
V
I
100  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
300  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
50  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I =10µA, I =0  
V
V
CBO  
CEO  
C
E
BV  
I =100µA, I =0  
50  
C
B
I
V
=40V, I =0  
0.1  
0.3  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
=5V, I =5mA  
68  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Output Capacitance  
I =10mA, I =0.5mA  
V
CE  
C
B
C
V
=10mA, I =0  
3.7  
pF  
ob  
CE  
E
f=1.0MHz  
f
Current Gain Bandwidth Product  
Input Off Voltage  
V
V
V
=10V, I =5mA  
250  
MHz  
V
T
CB  
CE  
CE  
C
V (off)  
=5V, I =100µA  
0.3  
I
C
V (on)  
Input On Voltage  
=0.3V, I =1mA  
1.4  
13  
V
I
C
R
Input Resistor  
7
10  
KΩ  
1
R /R  
Resistor Ratio  
0.19  
0.21  
0.24  
1
2
©2002 Fairchild Semiconductor Corporation  
Rev. A3, October 2002  

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