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KSR1008BU PDF预览

KSR1008BU

更新时间: 2024-11-08 13:48:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
5页 65K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

KSR1008BU 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.92其他特性:BUILT-IN BIAS RESISTOR RATIO IS 0.47
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):56
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

KSR1008BU 数据手册

 浏览型号KSR1008BU的Datasheet PDF文件第2页浏览型号KSR1008BU的Datasheet PDF文件第3页浏览型号KSR1008BU的Datasheet PDF文件第4页浏览型号KSR1008BU的Datasheet PDF文件第5页 
KSR1008  
Switching Application (Bias Resistor Built In)  
Switching circuit, Inverter, Interface circuit, Driver Circuit  
Built in bias Resistor (R =47K, R =22K)  
1
2
Complement to KSR2008  
TO-92  
1
1. Emitter 2. Collector 3. Base  
Equivalent Circuit  
C
R1  
B
R2  
NPN Epitaxial Silicon Transistor  
E
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
50  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
50  
V
CEO  
EBO  
10  
V
I
100  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
300  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
50  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I =10µA, I =0  
V
V
CBO  
CEO  
C
E
BV  
I =100µΑ, I =0  
50  
C
B
I
V
=40V, I =0  
0.1  
0.3  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
=5V, I =5mA  
56  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I =10mA, I =0.5mA  
V
CE  
C
B
C
I =10mA, I =0.5mA  
250  
3.7  
MHz  
pF  
ob  
C
B
f
V
=10V, I =0  
CB E  
T
f=1.0MHz  
V (off)  
Input Off Voltage  
Input On Voltage  
Input Resistor  
V
V
=5V, I =100µA  
0.8  
V
V
I
CE  
CE  
C
V (on)  
=0.3V, I =2mA  
4
I
C
R
32  
47  
62  
2.4  
KΩ  
1
R /R  
Resistor Ratio  
1.9  
2.1  
1
2
©2001 Fairchild Semiconductor Corporation  
Rev. A1, July 2001  

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