Datasheet > KSH45H11TM_NL

KSH45H11TM_NL

更新时间： 2024-11-05 20:39:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	39K
描述
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3

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技术参数
数据手册

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KSH45H11TM_NL 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	TO-252
包装说明：	SMALL OUTLINE, R-PSSO-G2	针数：	3
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.75	风险等级：	5.18
Base Number Matches：	1

KSH45H11TM_NL 数据手册

KSH45H11

General Purpose Power and Switching Such

as Output or Driver Stages in Applications

D-PAK for Surface Mount Applications

•

Lead Formed for Surface Mount Application (No Suffix)

Straight Lead (I-PAK, “- I” Suffix)

Electrically Similar to Popular KSE45H

Fast Switching Speeds

D-PAK

I-PAK

1.Base 2.Collector 3.Emitter

Low Collector Emitter Saturation Voltage

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

- 80

Units

Collector-Emitter Voltage

Emitter-Base Voltage

CEO

EBO

- 5

Collector Current (DC)

Collector Current (Pulse)

- 8

- 16

Collector Dissipation (T =25°C)

°C

Collector Dissipation (T =25°C)

1.75

150

Junction Temperature

Storage Temperature

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Emitter Sustaining Voltage

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

Typ.

Max.

Units

(sus)

= - 30mA, I = 0

- 80

CEO

EBO

= - 80V, I = 0

- 10

- 50

µA

= - 5V, I = 0

DC Current Gain

= - 1V, I = - 2A

= - 1V, I = - 4A

(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Collector Capacitance

Turn On Time

= - 8A, I = - 0.4A

- 1

(on)

= - 8A, I = - 0.8A

- 1.5

= - 10A, I = - 0.5A

230

135

500

100

MHz

= - 10V, f = 1MHz

= - 5A

= - I = - 0.5A

Storage Time

STG

Fall Time

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Rev. A4, October 2002

12 3 4 5

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