KSD882RSTU

更新时间： 2024-02-13 15:47:48

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KSD882RSTU 数据手册

KSD882

Audio Frequency Power Amplifier

Low Speed Switching

•

Complement to KSB772

TO-126

1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector- Base Voltage

Collector-Emitter Voltage

Emitter- Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current

CBO

CEO

EBO

0.6

Collector Dissipation (T =25°C)

°C

Collector Dissipation (T =25°C)

Junction Temperature

150

Storage Temperature

- 55 ~ 150

STG

* PW≤10ms, Duty Cycle≤50%

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector Cut-off Current

Emitter Cut-off Current

*DC Current Gain

Test Condition

Min.

Typ.

Max.

Units

µA

= 30V, I = 0

CBO

= 3V, I = 0

µA

EBO

= 2V, I = 20mA

150

160

FE1

= 2V, I = 1A

400

0.5

2.0

FE2

(sat)

*Collector-Emitter Saturation Voltage

*Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

= 2A, I = 0.2A

0.3

1.0

= 2A, I = 0.2A

= 5V, I = 0.1A

MHz

= 10V, I = 0

f = 1MHz

* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed

Classificntion

Classification

60 ~ 120

100 ~ 200

160 ~ 320

200 ~ 400

FE2

Rev. A, February 2000

12 3 4 5

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