KSD985/986
Low Frequency Power Amplifier
•
Low Speed Switching Industrial Use
TO-126
1. Emitter 2.Collector 3.Base
1
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Collector-Base Voltage
Collector-Emitter Volage
Value
Units
V
V
150
V
CBO
CEO
: KSD985
: KSD986
60
80
V
V
V
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
8.0
1.5
V
A
EBO
I
C
I
I
3.0
A
CP
B
0.15
1.0
A
P
Collector Dissipation (T =25°C)
W
W
°C
°C
C
a
P
T
T
Collector Dissipation (T =25°C)
10
C
C
Junction Temperature
150
J
Storage Temperature
- 55 ~ 150
STG
* PW≤300µs, Duty Cycle10%
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Collector Cut-off Current
Collector Cut-off Current
Test Condition
Min.
Typ.
Max.
10
Units
µA
I
I
V
V
= 60V, I = 0
CBO
CER
CB
CE
E
= 60V, R = 51Ω
1.0
mA
BE
@ T = 125°C
C
I
I
Collector Cut-off Current
V
V
= 60V, V (off) = -1.5A
10
1.0
µA
mA
CEX1
CE
BE
= 60V, V (off) = -1.5A
CEX2
CE
BE
@ T = 125°C
C
I
Emitter Cut-off Current
*DC Current Gain
V
= 5V, I = 0
1.0
mA
EBO
EB
C
h
h
V
V
= 2V, I = 0.5A
1000
2000
FE1
FE2
CE
CE
C
= 2V, I = 1A
30000
1.5
C
V
V
(sat)
(sat)
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Turn ON Time
I
I
= 1A, I = 1mA
V
CE
C
C
B
= 1A, I = 1mA
2.0
V
BE
B
t
t
t
V
= 50V, I = 1A
0.5
1.0
1.0
µs
µs
µs
ON
CC
C
I
= - I = 1mA
Storage Time
B1
B2
STG
F
R = 50Ω
L
Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2%
h
Classification
FE
Classification
R
O
Y
h
2000 ~ 5000
4000 ~ 10000
8000 ~ 30000
FE2
©2000 Fairchild Semiconductor International
Rev. A, February 2000