KSD986YS

更新时间： 2024-09-29 13:09:11

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中文翻译

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数据手册

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KSD986YS 数据手册

KSD985/986

Low Frequency Power Amplifier

•

Low Speed Switching Industrial Use

TO-126

1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Base Voltage

Collector-Emitter Volage

Value

Units

150

CBO

CEO

: KSD985

: KSD986

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current

8.0

1.5

EBO

3.0

0.15

1.0

Collector Dissipation (T =25°C)

°C

Collector Dissipation (T =25°C)

Junction Temperature

150

Storage Temperature

- 55 ~ 150

STG

* PW≤300µs, Duty Cycle10%

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector Cut-off Current

Test Condition

Min.

Typ.

Max.

Units

µA

= 60V, I = 0

CBO

CER

= 60V, R = 51Ω

1.0

@ T = 125°C

Collector Cut-off Current

= 60V, V (off) = -1.5A

1.0

µA

CEX1

= 60V, V (off) = -1.5A

CEX2

@ T = 125°C

Emitter Cut-off Current

*DC Current Gain

= 5V, I = 0

1.0

EBO

= 2V, I = 0.5A

1000

2000

FE1

FE2

= 2V, I = 1A

30000

1.5

(sat)

*Collector-Emitter Saturation Voltage

*Base-Emitter Saturation Voltage

Turn ON Time

= 1A, I = 1mA

2.0

= 50V, I = 1A

0.5

1.0

µs

= - I = 1mA

Storage Time

STG

R = 50Ω

Fall Time

* Pulse Test: PW≤350µs, Duty Cycle≤2%

Classification

2000 ~ 5000

4000 ~ 10000

8000 ~ 30000

FE2

Rev. A, February 2000

12 3 4 5

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