生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.67 |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 90 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSD882YS | ROCHESTER |
获取价格 |
3000mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126, LEAD FREE, TO-126, 3 PIN |
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KSD882YS | ONSEMI |
获取价格 |
NPN外延硅晶体管 |
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KSD882YSTU | ROCHESTER |
获取价格 |
3000mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126, TO-126, 3 PIN |
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KSD882YSTU | ONSEMI |
获取价格 |
NPN外延硅晶体管 |
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KSD882YSTUG | ONSEMI |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126 |
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KSD985 | FAIRCHILD |
获取价格 |
Audio Frequency Power Amplifier |
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KSD985 | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 1-Element, NPN, Silicon, TO-126 |
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KSD985O | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, |
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KSD985-O | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126 |
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KSD985OSTU | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, |
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