是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 4 weeks | 风险等级: | 1.21 |
Is Samacsys: | N | 最大集电极电流 (IC): | 3 A |
配置: | Single | 最小直流电流增益 (hFE): | 160 |
JESD-609代码: | e3 | 最高工作温度: | 150 °C |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 10 W | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin (Sn) |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSD794O | FAIRCHILD |
获取价格 |
暂无描述 |
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KSD794-O | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126 |
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KSD794-R | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126 |
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KSD794Y | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, |
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KSD794-Y | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126 |
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KSD880 | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti |
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KSD880 | FAIRCHILD |
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Low Frequency Power Amplifier |
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KSD880G | FAIRCHILD |
获取价格 |
暂无描述 |
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KSD880-G | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti |
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KSD880O | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti |
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