KSC2258ASTU PDF预览

KSC2258ASTU

更新时间: 2025-08-27 19:02:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 44K
描述
元器件封装:TO-126-3;

KSC2258ASTU 数据手册

 浏览型号KSC2258ASTU的Datasheet PDF文件第2页浏览型号KSC2258ASTU的Datasheet PDF文件第3页浏览型号KSC2258ASTU的Datasheet PDF文件第4页 
KSC2258/2258A  
High Voltage General Amplifier  
TV Video Output Amplifier  
High BV  
CEO  
TO-126  
1. Emitter 2.Collector 3.Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
CBO  
: KSC2258  
: KSC2258A  
250  
300  
V
V
V
V
CEO  
EBO  
: KSC2258  
: KSC2258A  
250  
300  
V
V
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
6
100  
V
mA  
mA  
W
I
I
C
150  
CP  
P
T
T
Collector Dissipation (T =25°C)  
4
C
C
Junction Temperature  
Storage Temperature  
150  
°C  
°C  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
BV  
I = 0.1mA, I = 0  
6
EBO  
CER  
E
C
I
V
= 250V, R = 100KΩ  
100  
µA  
CE  
BE  
h
h
V
V
= 20V, I = 40mA  
40  
30  
FE1  
CE  
CE  
C
= 50V, I = 5mA  
C
FE2  
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
= 50mA, I = 5mA  
1.2  
1.2  
V
V
CE  
C
B
V
V
V
= -20V, I = 40mA  
C
BE  
CE  
CE  
CB  
f
Current Gain Bandwidth Product  
Output Capacitance  
= 10V, I = 10mA  
100  
3
MHz  
pF  
T
C
C
= 50V, f = 1MHz  
4.5  
ob  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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