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KSC2310RNBU PDF预览

KSC2310RNBU

更新时间: 2024-11-06 19:44:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
4页 38K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 PIN

KSC2310RNBU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92L包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.73最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

KSC2310RNBU 数据手册

 浏览型号KSC2310RNBU的Datasheet PDF文件第2页浏览型号KSC2310RNBU的Datasheet PDF文件第3页浏览型号KSC2310RNBU的Datasheet PDF文件第4页 
KSC2310  
High Voltage Power Amplifier  
Collector-Base Voltage : V  
Current Gain Bandwidth Product : f =100MHz  
=200V  
CBO  
T
TO-92L  
1. Emitter 2. Collector 3. Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
200  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
CBO  
150  
CEO  
EBO  
5
V
I
50  
mA  
mW  
°C  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
800  
C
T
T
150  
J
-55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
200  
150  
5
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I =100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I =5mA, I =0  
C B  
I =100µA, I =0  
V
E
C
I
V
=200V, I =0  
0.1  
240  
0.5  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
=5V, I =10mA  
40  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I =10mA, I =1mA  
V
CE  
C
B
f
V
=30V, I =10mA  
100  
3.5  
MHz  
pF  
T
CE  
CB  
C
C
V
=10V, I =0, f=1MHz  
5
ob  
E
h
Classification  
FE  
Classification  
R
O
Y
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, September 2002  

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