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KSC2310RTA PDF预览

KSC2310RTA

更新时间: 2024-11-06 13:09:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器功率放大器
页数 文件大小 规格书
4页 43K
描述
暂无描述

KSC2310RTA 数据手册

 浏览型号KSC2310RTA的Datasheet PDF文件第2页浏览型号KSC2310RTA的Datasheet PDF文件第3页浏览型号KSC2310RTA的Datasheet PDF文件第4页 
KSC2310  
High Voltage Power Amplifier  
Collector-Base Voltage : V  
Current Gain Bandwidth Product : f =100MHz  
=200V  
CBO  
T
TO-92L  
1. Emitter 2. Collector 3. Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
200  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
CBO  
150  
CEO  
EBO  
5
V
I
50  
mA  
mW  
°C  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
800  
C
T
T
150  
J
-55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
200  
150  
5
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I =100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I =5mA, I =0  
C B  
I =100µA, I =0  
V
E
C
I
V
=200V, I =0  
0.1  
240  
0.5  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
=5V, I =10mA  
40  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I =10mA, I =1mA  
V
CE  
C
B
f
V
=30V, I =10mA  
100  
3.5  
MHz  
pF  
T
CE  
CB  
C
C
V
=10V, I =0, f=1MHz  
5
ob  
E
h
Classification  
FE  
Classification  
R
O
Y
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, September 2002  

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